Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Uniform doping method of SiC single crystal metal impurity

A technology of uniform doping of metal impurities, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of uneven release process, achieve high repeatability and low equipment requirements

Active Publication Date: 2019-05-07
广州南砂晶圆半导体技术有限公司
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method of built-in crucible also has certain disadvantages, that is, although the release of impurities is slowed down, there is still unevenness in the release process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Uniform doping method of SiC single crystal metal impurity
  • Uniform doping method of SiC single crystal metal impurity
  • Uniform doping method of SiC single crystal metal impurity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A method for uniformly doping SiC single crystal metal impurities includes the following steps:

[0036] (1) The high-purity SiC powder and the material to be doped are uniformly mixed, the mixing method includes ball milling or stirring, and the solid solubility of the material to be doped in SiC is used as the maximum doping measurement value of the material to be doped; The material to be doped is one or more of metal, oxide, carbide or silicide, so as to avoid introducing other impurities.

[0037] (2) After mixing, fill the mixed powder with a high purity sealed graphite crucible, and put it in a heating device with a temperature of up to 2000°, and place it in a constant temperature zone; after the heating device is closed, the growth is removed after repeated pumping The residual air in the cavity, especially the nitrogen and oxygen in the air, is fed with inert gas such as argon as the background gas, and the pressure is maintained at normal pressure. Then the tempe...

Embodiment 2

[0041] A method for uniformly doping SiC single crystal metal impurities. The steps are as described in Embodiment 1, except that in step (2), after argon gas is introduced, the temperature is raised to 2500° C. for 48 hours.

Embodiment 3

[0043] A method for uniformly doping SiC single crystal metal impurities. The steps are as described in Example 1, except that in step (2), the temperature is kept for 48 hours after the temperature is raised and then the temperature is lowered to room temperature, and the temperature is lowered at a rate of 50°C / min.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a uniform doping method of SiC single crystal metal impurity, and belongs to the technical field of crystal growth. The method comprises: uniformly mixing SiC powder and a to-be-doped material, forming a polycrystalline SiC block uniformly doped with the metal by using high temperature and normal pressure heating in a constant temperature zone, cutting the polycrystallineSiC block into small volume cubes, uniformly mixing the small volume cubes and SiC powder, placing in a graphite crucible for PVT growth, carrying out single crystal growth, and obtaining the SiC having the predetermined doping concentration and uniformly doped with the metal impurity according to a conventional single crystal growth method, wherein the metal impurity in the polycrystalline SiC block can be gradually and uniformly released along with the decomposition of SiC in the PVT growth so as to achieve the purpose of uniform doping. According to the present invention, the method has characteristics of low requirements on SiC single crystal equipment, no requirement of modification, no introduction of other impurities and high repeatability.

Description

Technical field [0001] The invention relates to a method for uniformly doping SiC single crystal metal impurities, and belongs to the technical field of crystal growth. Background technique [0002] As a typical representative of the third-generation semiconductor materials, SiC is a relatively fast-developing semiconductor. The nature of the material determines the application field of the material. SiC material has excellent semiconductor properties such as large forbidden band width, high saturated electron velocity, high critical breakdown electric field strength, and high thermal conductivity. It is very suitable for preparing high-temperature, high-frequency, high-power semiconductor devices, and can be competent for semiconductors such as Si that cannot be used. field. Therefore, SiC has huge application potential in the fields of high temperature, high frequency, high power and radiation resistance. In the field of microelectronic devices, SiC-based P-i-N diodes, heter...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36
Inventor 徐南彭燕徐现刚陈秀芳于国建
Owner 广州南砂晶圆半导体技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com