Solid solution nanowire as well as preparation method and application thereof

A nanowire and solid solution technology, which is applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc. Effect

Active Publication Date: 2019-05-03
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, the performance of the nanowire materials of the above two schemes needs to be further improved, and the preparation process is cumbersome.

Method used

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  • Solid solution nanowire as well as preparation method and application thereof
  • Solid solution nanowire as well as preparation method and application thereof
  • Solid solution nanowire as well as preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0081] This embodiment prepares solid solution nanowires according to the following method:

[0082] (1) Cut the silicon wafer into 1×1 cm slices, use acetone, isopropanol and absolute ethanol as solvents to ultrasonically clean the silicon wafers for 15 minutes, and dry them with nitrogen to obtain pretreated silicon wafers. Carry out ion sputtering covering gold film (i.e. spraying gold) with ion sputtering instrument on the silicon chip of above-mentioned pretreatment with the electric current of 9mA, the time of ion sputtering is 90s, obtains the substrate that covers gold, described covered gold The substrate is placed in the reactor and evacuated by a vacuum pump until the pressure in the quartz tube reactor is 1Pa, then argon gas with a flow rate of 50 sccm is introduced, and annealing is performed at 450°C for 30 minutes, and the annealed substrate is obtained after natural cooling;

[0083] (2) The mixture of InP and ZnSe (in the mixture, the molar percentage of InP i...

Embodiment 2

[0095] This embodiment prepares solid solution nanowires according to the following method:

[0096] (1) Cut the silicon wafer into 1×1 cm slices, use acetone, isopropanol and absolute ethanol as solvents to ultrasonically clean the silicon wafers for 15 minutes, and dry them with nitrogen to obtain pretreated silicon wafers. Carry out ion sputtering covering gold film (i.e. spraying gold) with the electric current of 8mA on the silicon chip of above-mentioned pretreatment, the time of ion sputtering is 120s, obtains the substrate that covers gold, the described covered gold Place the substrate in the reactor and evacuate it with a vacuum pump until the pressure in the quartz tube reactor is 0.9Pa, then flow argon gas with a flow rate of 40sccm, anneal at 420°C for 40min, and cool naturally to obtain an annealed substrate ;

[0097] (2) The mixture of InP and ZnSe (in the mixture, the molar percentage of InP is 50%) is placed at the end of the sealed end of the quartz tube wi...

Embodiment 3

[0101] This embodiment prepares solid solution nanowires according to the following method:

[0102] (1) Cut the silicon wafer into 1×1 cm slices, use acetone, isopropanol and absolute ethanol as solvents to ultrasonically clean the silicon wafers for 15 minutes, and dry them with nitrogen to obtain pretreated silicon wafers. Carry out ion sputtering and cover gold film (i.e. spray gold) with ion sputtering instrument on the silicon chip of above-mentioned pretreatment with the electric current of 10mA, the time of ion sputtering is 60s, obtains the substrate that covers gold, the described cover gold Place the substrate in the reactor and evacuate it with a vacuum pump until the pressure in the quartz tube reactor is 0.85Pa, then pass in argon gas with a flow rate of 60sccm, and anneal at 480°C for 20 minutes. After natural cooling, the annealed substrate is obtained. ;

[0103] (2) The mixture of InP and ZnSe (in the mixture, the molar percentage of InP is 66.7%) is placed ...

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Abstract

The invention provides a solid solution nanowire as well as a preparation method and application thereof. The provided solid solution nanowire is InP-ZnSe solid solution nanowire. The preparation method comprises the following steps that (1) a catalyst covers a substrate, moreover, the substrate covered with the catalyst undergoes annealing to obtain an annealed substrate; (2) a mixture of the InPand the ZnSe is placed on one side of a quartz pipe with one end sealed and one end opened, the annealed substrate is placed on the other side of the quartz pipe, the quartz pipe is put into a reaction furnace, protective gas is introduced after vacuumizing is performed, chemical vapor deposition reaction is performed under a heating condition, the solid solution nanowire is obtained, wherein thetemperature of the mixture of the InP and the ZnSe is higher than the temperature of the annealed substrate. The provided solid solution nanowire is uniform in size, good in crystallinity, high in migration rate, adjustable in size of a band gap and can be used in a device, and the use amount of the rare metal In is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and nanotechnology, and in particular relates to a solid solution nanowire and its preparation method and application. Background technique [0002] Compared with bulk materials, nanomaterials have the characteristics of small average particle size, many surface atoms, large specific surface area, and high surface energy. Therefore, many bulk materials do not have excellent properties, especially in optics, electricity, heat, and magnetism. Nanotechnology has a very important role and application prospects in the fields of nanotechnology, mechanics and life sciences, and has attracted the close attention of research institutions and researchers all over the world. Some scholars even predict that nanotechnology will become the dominant technology in the 21st century. Among them, one-dimensional nanomaterials have unique morphology characteristics and physical and chemical properties, and have...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/02B82Y30/00B82Y40/00
Inventor 萨德·阿拉·简郭北斗宫建茹
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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