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Gallium arsenide polishing solution and preparation method thereof

A technology of polishing liquid and gallium arsenide, applied in the field of polishing liquid, can solve the problem of difficult to meet the polishing requirements of gallium arsenide, and achieve the effect of good use effect, guaranteeing consistency and reducing volatilization

Inactive Publication Date: 2019-05-03
天津洙诺科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the currently used polishing liquid, it is difficult to meet the polishing requirements of gallium arsenide

Method used

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  • Gallium arsenide polishing solution and preparation method thereof
  • Gallium arsenide polishing solution and preparation method thereof

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Embodiment 1

[0027] see figure 1 , in the embodiment of the present invention, a gallium arsenide polishing solution is prepared from the following raw materials in parts by weight: 20 kg of abrasive, 3 kg of surfactant, 1 kg of chelating agent, 1 kg of pH regulator, and 1 kg of moisturizing agent ㎏, deionized water 30kg.

[0028] Among the above-mentioned raw materials, the moisturizing agent is polyvinyl alcohol, the abrasive is water-soluble silica sol, the particle size is 90-150nm, the surfactant is fatty alcohol polyoxyethylene ether, the pH regulator is potassium hydroxide, and the chelating agent is ethylene glycol. The purity of amine tetraacetic acid and deionized water reaches analytical purity.

[0029] The embodiment of the present invention also provides a preparation method of gallium arsenide polishing solution, the specific steps are:

[0030] S1, weigh 20kg of water-soluble silica sol, 3kg of fatty alcohol polyoxyethylene ether, 1kg of ethylenediaminetetraacetic acid, 1...

Embodiment 2

[0035] A gallium arsenide polishing solution prepared from the following raw materials in parts by weight: 40 kg of abrasive, 7 kg of surfactant, 3 kg of chelating agent, 6 kg of pH value regulator, 3 kg of moisturizing agent, and 50 kg of deionized water . Among the above raw materials, the humectant is hydroxyethyl cellulose, the abrasive is water-soluble silica sol, the particle size is 90-150nm, the surfactant is alkanolamide, the pH regulator is sodium hydroxide, and the chelating agent is ethylene glycol. The purity of amine tetraacetic acid and deionized water reaches analytical purity.

[0036] The embodiment of the present invention also provides a preparation method of gallium arsenide polishing solution, the specific steps are:

[0037] S1, weigh 40kg of water-soluble silica sol, 7kg of alkanolamide, 3kg of ethylenediaminetetraacetic acid, 6kg of sodium hydroxide, 3kg of hydroxyethyl cellulose, and 50kg of deionized water;

[0038] S2, put 40kg of water-soluble si...

Embodiment 3

[0042] A gallium arsenide polishing solution prepared from the following raw materials in parts by weight: 30 kg of abrasive, 5 kg of surfactant, 2 kg of chelating agent, 3 kg of pH value regulator, 2 kg of moisturizing agent, and 40 kg of deionized water . Among the above-mentioned raw materials, the humectant is hydroxyethyl cellulose, the abrasive is water-soluble silica sol, the particle size is 90-150nm, the surfactant is alkanolamide, the pH regulator is sodium hydroxide, and the chelating agent is ethylene glycol. The purity of amine tetraacetic acid and deionized water reaches analytical purity.

[0043] The embodiment of the present invention also provides a preparation method of gallium arsenide polishing solution, the specific steps are:

[0044] S1, weigh 30kg of water-soluble silica sol, 5kg of alkanolamide, 2kg of ethylenediaminetetraacetic acid, 3kg of sodium hydroxide, 2kg of hydroxyethyl cellulose, and 40kg of deionized water;

[0045]S2, put 30 kg of water-...

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Abstract

The invention discloses a gallium arsenide polishing solution which is prepared from the following raw materials in parts by weight: 20-40 parts of an abrasive, 3-7 parts of a surfactant, 1-3 parts ofa chelating agent, 1-6 parts of a pH value regulator, 1-3 parts of a humectant and 30-50 parts of deionized water, the preparation method disclosed by the invention has the benefits as follows: the low-stress, low-damage and ultra-smooth processing of gallium arsenide can be realized; meanwhile, the volatilization of water is reduced successfully in the using process, and the drying and crystallization of the polishing solution due to evaporation of the water are inhibited, in addition, during preparation, the raw materials are subjected to twice stirring and primary ultrasonic dispersion, sothat the consistency of the polishing solution and the dispersing performance of the raw materials can be ensured; finally, the prepared polishing solution is high in quality and good in using effect.

Description

technical field [0001] The invention relates to a polishing liquid, in particular to a gallium arsenide polishing liquid and a preparation method thereof. Background technique [0002] Gallium arsenide, chemical formula GaAs. Black-gray solid with a melting point of 1238°C. It can exist stably in the air below 600°C and is not corroded by non-oxidizing acids. Gallium arsenide is an important semiconductor material. It belongs to III-V group compound semiconductor. It is a sphalerite lattice structure with a lattice constant of 5.65×10-10m, a melting point of 1237°C and a band gap of 1.4 electron volts. Gallium arsenide entered the practical stage in 1964. Gallium arsenide can be made into a semi-insulating high-resistance material whose resistivity is more than 3 orders of magnitude higher than that of silicon and germanium, and is used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 伊观兰
Owner 天津洙诺科技有限公司
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