Positive temperature coefficient polysilicon resistance structure and manufacturing method thereof

Abstract

The invention provides a positive temperature coefficient polysilicon resistance structure and a manufacturing method thereof. The resistance structure includes several polysilicon unit resistors, and each polysilicon unit resistance includes a non-metallized polysilicon region whose resistance value in the middle region changes with a negative temperature coefficient and The metallized polysilicon area in the end area has a positive temperature coefficient change in resistance value, and the adjacent polysilicon unit resistance is connected to the metal wire with a positive temperature coefficient change in resistance value through a contact hole formed in the end area. In the manufacturing method, by adjusting the ratio of the non-metallized polysilicon region to the metallized polysilicon region, the positive change of the resistance value of the metallized polysilicon region with temperature is greater than or equal to that of the non-metallized polysilicon region. negative variation of . The invention can avoid the limitation of the performance of the semiconductor device, and obtain a higher resistance positive temperature coefficient polysilicon resistance structure without increasing the process burden, ensuring the process stability of the device, and not sacrificing the area.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a positive temperature coefficient polysilicon resistance structure and a manufacturing method thereof. Background technique [0002] Semiconductor resistance devices are one of the most widely used devices in semiconductor chip products, and the temperature characteristics of resistance are very important in product applications. Commonly used resistors are as follows. The resistance formed by using polysilicon material on the semiconductor substrate through the isolation of the oxide layer is called polysilicon (Poly) resistance. Please refer to Figure 14 , the relationship between the resistance of the diffusion region and the position of the polysilicon resistance is as follows. Taking the P-type silicon substrate as an example, it includes a P-type silicon substrate 301, an N-type diffused region resistor 302, an oxide layer 303, and a polysilicon resi...

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Problems solved by technology

In order to obtain a positive temperature coefficient resistance structure with a higher resistance value, it is generally obtained through the process of the above-mentioned diffusion region resistance or well region resistance. The disadvantage is that the accuracy or area is sacrificed. When the resistance accuracy requirements are very strict, the design is limited by the inability to obtain a polysilicon resistance structure with a positive temperature coefficient

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