Positive temperature coefficient polysilicon resistance structure and manufacturing method thereof
A technology of polysilicon resistance and positive temperature coefficient, which is applied in the direction of resistors, circuits, electrical components, etc., can solve the problems of inability to obtain polysilicon resistance structure design and limitations, and achieve the effect of avoiding performance limitations and excellent process stability
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[0033] The present invention is described in detail below in conjunction with accompanying drawing:
[0034] image 3 It is a structural schematic diagram of a metal silicide barrier layer covering the middle area of a traditional non-metallized polysilicon resistor. Please refer to image 3 , due to the polysilicon resistance structure in the manufacturing process, by setting the metal silicide barrier layer 20 in the middle region 11 to prevent the metallization of the middle region 11, and the exposed end region 12 is generally provided with a contact hole 13 through the metal silicide metal connected by metal wires. Figure 4 is a curve diagram of the resistance value of the middle region of the polysilicon resistance structure changing with temperature; Figure 5 It is a graph showing the variation of resistance value with temperature after the end region of the polysilicon resistance structure is metallized with metal silicide. Wherein the abscissa is the temperatu...
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