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Method for preparing multilayer electronic device and multilayer electronic device

An electronic device and device technology, applied in the field of electronic devices, can solve the problems of rising product cost, volatilization of precious metal alloys, and high price.

Inactive Publication Date: 2019-04-23
WEIFANG GOERTEK MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high melting point precious metals are expensive, the cost of the product will increase significantly
Moreover, the above method cannot fundamentally solve the problem of volatilization and diffusion of the metal material layer
When the sintering temperature is higher than 1100 degrees Celsius, the precious metal alloy will still volatilize and cause damage to the electrode layer.

Method used

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  • Method for preparing multilayer electronic device and multilayer electronic device
  • Method for preparing multilayer electronic device and multilayer electronic device

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Embodiment Construction

[0027] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0028] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

[0029] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the description.

[0030] In all examples shown and discussed herein, any specific values ​​should be construed as exemplary only, and not as limitations. Therefore, other instances of the exemplary embodiment may have dif...

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Abstract

The invention discloses a method for preparing a multilayer electronic device and a multilayer electronic device. The preparation method comprises the steps of: preparing a ceramic substrate; formingan electrode thin layer on the ceramic substrate, wherein the electrode thin layer is made of metallic oxide, and one ceramic substrate and one electrode thin layer on the ceramic substrate form one device unit; putting a plurality of device units to a preformed unit in a stack mode, and applying pressing force to the preformed unit to laminate and fix the device units; and performing the sintering process to the preformed unit to prepare the multilayer electronic device. The problem is solved that the electrode thin layer is easily volatilized during processing.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, in particular, the invention relates to a preparation method of a multilayer electronic device and the multilayer electronic device. Background technique [0002] Capacitive, inductive and piezoelectric electronic devices have been widely used in various instruments and equipment due to their unique physical properties. With the trend of lightweight electronic products, such products usually need to reduce the size and weight as much as possible. In order to achieve this goal and maximize the performance of the device, those skilled in the art try to make the electronic device into a multi-layer stacked structure. [0003] The electrodes in the multilayer stacked structure are usually made of metal materials, and the metal materials can be laid on the ceramic substrate by screen printing technology and other methods. Using ceramic materials as the substrate of multilayer stacked elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/30H01G4/008H01G4/12
CPCH01G4/0085H01G4/12H01G4/30
Inventor 阎堂柳孔德洲刘宽丁薇薇高洪伟俞胜平
Owner WEIFANG GOERTEK MICROELECTRONICS CO LTD
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