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Preparation method of oxygen vacancy type metal oxide semiconductor photocatalyst

An oxide semiconductor and photocatalyst technology, applied in metal/metal oxide/metal hydroxide catalysts, catalyst activation/preparation, physical/chemical process catalysts, etc., can solve safety hazards, high cost of preparation process and equipment requirements higher question

Inactive Publication Date: 2021-07-06
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the above method requires high equipment, high cost of preparation process, and there are certain safety hazards

Method used

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  • Preparation method of oxygen vacancy type metal oxide semiconductor photocatalyst
  • Preparation method of oxygen vacancy type metal oxide semiconductor photocatalyst
  • Preparation method of oxygen vacancy type metal oxide semiconductor photocatalyst

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] In this example, the oxygen vacancy type metal oxide semiconductor photocatalyst WO 3-x (0

[0044] Weigh 2.0g commercial WO 3 The powder and 0.05g (2.5wt%) metal tungsten powder are fully ground and mixed in an agate mortar. Put the above mixture into a porcelain boat, heat-treat at 600°C for 4 hours in a tube furnace under an Ar protective atmosphere, and cool naturally to room temperature to obtain tungsten oxide powder containing oxygen vacancies (WO 3-x , 0<x<0.5).

[0045] Since the crystal lattice of the semiconductor will be partially destroyed when oxygen vacancies are introduced, some wrinkles and fragments will appear, and the prepared tungsten oxide powder (WO 3-x , 0figure 1 As shown, the folds of the lattice fringe indicate the formation of oxygen vacancies.

[0046] figure 2 It is the prepared tungsten oxide powder (WO 3-x , 0-1). For tungsten oxide, at 680cm -1 The characteristic Raman peaks of tungsten oxide correspond to ...

Embodiment 2

[0051] In this example, the oxygen vacancy type metal oxide semiconductor photocatalyst TiO 2-x (0

[0052] Weigh 2.0g commercial TiO2 powder (P25) and 0.05g (2.5wt%) metallic titanium powder, grind and mix thoroughly in an agate mortar. The above mixture was put into a porcelain boat, heat-treated at 600°C for 4h in a tube furnace under an Ar protective atmosphere, and cooled naturally to room temperature to obtain titanium dioxide powder containing oxygen vacancies (TiO 2-x , 0<x<0.5).

[0053] to TiO 2-x Tested with a transmission electron microscope, the results are as follows Figure 6 The folds of the lattice fringes shown indicate the formation of oxygen vacancies.

[0054] The Raman test results are as follows Figure 7 Shown; EPR test results are as follows Figure 8 Shown; light absorption properties and photoelectrochemical properties are as follows Figure 9 and Figure 10 shown.

Embodiment 3

[0056] In this example, the oxygen vacancy type metal oxide semiconductor photocatalyst Fe 2 o 3-x (0

[0057] Weigh 2.0g commercial iron oxide powder and 0.05g (2.5wt%) metal iron powder, grind and mix thoroughly in an agate mortar. The above mixture was put into a porcelain boat, heat-treated at 600°C for 4 hours in a tube furnace under an Ar protective atmosphere, and cooled naturally to room temperature to obtain iron oxide powder containing oxygen vacancies (Fe 2 o 3-x , 0<x<0.5).

[0058] to Fe 2 o 3-x Tested with a transmission electron microscope, the results are as follows Figure 11 Shown; Raman spectrum as Figure 12 Shown; EPR test results are as follows Figure 13 Shown; light absorption properties and photoelectrochemical properties are as follows Figure 14 and Figure 15 shown.

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Abstract

The invention provides a preparation method of an oxygen vacancy type metal oxide semiconductor photocatalyst. The steps include mixing the metal oxide powder and the corresponding metal element particles of the metal oxide, and then sintering the obtained mixture under an inert atmosphere. The preparation method of the oxygen vacancy type metal oxide semiconductor photocatalyst provided by the invention solves the problems existing in the preparation of the oxygen vacancy type metal oxide semiconductor photocatalyst by the high temperature and high pressure pure hydrogen reduction method and the displacement reaction method in the prior art. The preparation method does not introduce impurity elements, the preparation process is simple and convenient, and has high safety and reliability. The photoelectrochemical activity of the oxygen vacancy semiconductor material prepared by the method of the present invention is higher than that of the prior art. The preparation method of the present invention is effective in preparing oxygen vacancy It has quantitative controllability, and semiconductor catalysts with different content of oxygen vacancies can be obtained by controlling the mass fraction of metal element.

Description

technical field [0001] The invention belongs to the technical field of catalytic engineering, in particular to a preparation method of an oxygen vacancy type metal oxide semiconductor photocatalyst. Background technique [0002] Due to the advantages of non-toxicity, easy preparation, low price and good stability, metal oxide semiconductors have broad application prospects in photolysis of water, photodegradation, photochromism and solar cells. [0003] The defect structure in semiconductors plays a very important role in the field of photocatalysis. On the one hand, an appropriate amount of defect structure provides active sites for photocatalytic reactions; on the other hand, oxygen vacancies caused by low-valence metal ions will form new impurity levels in the energy band structure of the semiconductor, further broadening the light absorption. scope. [0004] In the prior art, the method for preparing an oxygen vacancy type semiconductor material is a high temperature a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J21/06B01J23/06B01J23/30B01J23/745B01J37/00B01J37/08B01J37/16
CPCB01J21/063B01J23/06B01J23/30B01J23/745B01J37/0036B01J37/08B01J37/16B01J35/39
Inventor 李文章占发琦李洁
Owner CENT SOUTH UNIV
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