Semiconductor device and method of forming the same

Abstract

A semiconductor device and a method for forming the same, wherein the method includes: providing a semiconductor substrate with a plurality of fins and an isolation layer covering sidewalls of the fins on the semiconductor substrate; forming a gate structure on the semiconductor substrate and the isolation layer, The gate structure spans the fin and covers part of the top surface and part of the sidewall surface of the fin, and the fins on both sides of the gate structure have replacement regions; using a selective epitaxial growth process on the sidewalls of the fin replacement regions Forming a sacrificial layer on the surface of the isolation layer; forming a fin sidewall on the surface of the isolation layer on the sidewall of the sacrificial layer, and forming a gap sidewall on the sidewall of the gate structure during the formation of the fin sidewall; removing the gate structure and the gap The replacement area on both sides of the sidewall and the sacrificial layer form a groove in the fin, and the sidewalls on both sides of the groove in the width direction of the fin respectively expose the fin sidewall; the source is formed in the groove Drain doped layer. The method improves the performance of semiconductor devices.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistors are one of the most important components in modern integrated circuits. The basic structure of the MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes: a gate dielectric layer located on the surface of the semiconductor substrate and a gate electrode layer located on the surface of the gate dielectric layer; The source and drain doped regions in the semiconductor substrate on both sides of the pole structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) i...

AI Technical Summary

Problems solved by technology

[0004] However, the performance of semiconductor devices composed of fin field effect transistors in the prior art still needs to be improved

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