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A kind of sensor and preparation method thereof

A sensor and force sensor technology, applied in the field of micro-electromechanical systems, can solve the problems of limited application scenarios and the inapplicability of pressure sensors, and achieve the effects of expanding application scenarios, easy calibration and mass production

Active Publication Date: 2019-06-25
BEIJING INST OF COLLABORATIVE INNOVATION +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above-mentioned piezoresistive MEMS pressure sensor has obvious defects. Its detection depends on fluid media such as gas and liquid. The actual detection is the force exerted by fluids such as gas or liquid on the silicon pressure sensitive diaphragm. The pressure of the liquid, rather than the external force itself directly acting on the silicon sensitive diaphragm, can only be applied to scenes with fluid media such as gas and liquid. When there is no gas or liquid as the medium, this type of pressure sensor will not be applicable, greatly Limit its application scenarios

Method used

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  • A kind of sensor and preparation method thereof
  • A kind of sensor and preparation method thereof
  • A kind of sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Embodiment 1 force sensor

[0042] The embodiment of the present invention proposes a force sensor, including a MEMS force sensor chip. The chip includes a substrate 10 with a groove 11 on the upper surface of the substrate 10 and a pressure sensitive layer 20 on the upper surface of the substrate 10 .

[0043] The pressure sensitive layer 20 includes a frame 21 and a pressure sensitive beam 22 . The frame 21 at least partially surrounds, preferably completely surrounds the groove 11, the pressure sensitive beam 22 is formed above the groove 11 through the pressure sensitive layer 20 above the hollow groove 11, and the pressure sensitive beam 22 is suspended , the lower surface of which has a certain distance from the bottom of the groove 11 , and each end of the pressure sensitive beam 22 is in contact with the frame 21 of the pressure sensitive layer 20 respectively.

[0044] The pressure-sensitive beam 22 is a pressure-sensitive beam 22 with an axisymmetric structure ...

Embodiment 2

[0062] Embodiment 2 Preparation method of force sensor

[0063] refer to Figures 3a-3d , this embodiment proposes a method for preparing the force sensor described in Embodiment 1, comprising the following steps:

[0064] S1: Refer to Figure 3a , on the SOI substrate having the cavity 11, thin the pressure sensitive diaphragm to a predetermined thickness to form a pressure sensitive layer 20, the SOI substrate is composed of the SOI substrate 10 and the pressure sensitive diaphragm;

[0065] S2: Refer to Figure 3b , making four piezoresistors 23 distributed axisymmetrically or centrally symmetrically at preset positions on the upper surface of the pressure sensitive layer 20, and connecting the four piezoresistors 23 to form a Wheatstone bridge;

[0066] S3: Refer to Figure 3c , making lead holes and metal leads 224 on the pressure sensitive layer 20 based on the preset structure of the pressure sensitive beam 22 and the position of the piezoresistor;

[0067] S4. Ref...

Embodiment 3

[0081] Embodiment 3 A sensor packaged with the above-mentioned force sensor chip

[0082] refer to Figure 4-Figure 6 , the present embodiment proposes a sensor, including the above-mentioned MEMS force sensor chip, a pressure conducting component 50 , a sensor chip containing body and an elastic component 40 .

[0083] The chip includes a substrate 10 , the upper surface of the substrate 10 has a groove 11 , and a pressure sensitive layer 20 is arranged on the upper surface of the substrate 10 .

[0084] The pressure sensitive layer 20 includes a frame 21 and a pressure sensitive beam 22 . The frame 21 at least partially surrounds, preferably completely surrounds the groove 11, the pressure sensitive beam 22 is formed above the groove 11 through the pressure sensitive layer 20 above the hollow groove 11, and the pressure sensitive beam 22 is suspended , the lower surface of which has a certain distance from the bottom of the groove 11 , and each end of the pressure sensitiv...

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Abstract

The embodiment of the present invention relates to a sensor and a preparation method thereof. The sensor includes a MEMS force sensor chip, a pressure conduction component, a sensor chip container and an elastic sheet; the sensor chip container is used to accommodate the MEMS force sensor The chip has an open end; the middle part of the elastic sheet has a round hole, and the elastic sheet is fixedly connected to the open end of the sensor chip container; the pressure conducting part is used to transmit external pressure to the pressure sensitive beam, and one end is arranged on the On the positioning hole or the positioning groove, the other end is connected with the round hole in the middle of the elastic sheet. The sensor can directly detect external pressure without a medium, expands application scenarios, has sensitive and accurate detection, and has a simple packaging process.

Description

technical field [0001] The present invention relates to the technical field of micro-electro-mechanical systems (Micro-Electro-Mechanical Systems, MEMS), and more specifically, to a sensor and a preparation method thereof. Background technique [0002] The pressure sensor is a semiconductor thin film element, which has the advantages of small size, light weight, high precision, high sensitivity and low cost. In the prior art, there are mainly two types of MEMS pressure sensors: capacitive and piezoresistive. Among them, the piezoresistive pressure sensor is formed by forming a piezoresistor on a silicon pressure sensitive diaphragm to form a Wheatstone bridge ( Figure 1a is the schematic diagram of the Wheatstone bridge principle), when the external pressure acts on the silicon pressure-sensitive diaphragm, the diaphragm will be deformed, causing the silicon material lattice to compress and stretch, resulting in a change in the resistance value of the piezoresistor. Stone b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/22G01L9/04
CPCG01L1/22G01L9/04
Inventor 张威周浩楠
Owner BEIJING INST OF COLLABORATIVE INNOVATION
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