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Disc-type laser device

A laser device, disc type technology, applied in the field of optical communication, can solve the problems of large size, disadvantageous silicon-based optical chips, increase the coupling cost of laser and silicon chips, etc., and achieve the effects of small size, excellent luminous intensity and threshold value

Active Publication Date: 2019-04-16
THE CHINESE UNIV OF HONG KONG SHENZHEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method will increase the coupling cost between the laser and the silicon chip, and the size of waveguide (FP) laser devices, distributed feedback (DFB) laser devices and vertical cavity surface (VCSEL) emitting laser devices is large, which is not conducive to Silicon-based optical chips suitable for large-area and high-density integration

Method used

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  • Disc-type laser device

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Effect test

Embodiment 1

[0069] A disc type laser device, comprising a silicon substrate, an InGaAs / GaAs superlattice defect suppression layer formed on the silicon substrate, a GaAs buffer layer formed on the defect suppression layer, and a GaAs buffer layer formed on the GaAs buffer layer al 0.6 Ga 0.4 As sacrificial layer, formed on the Al 0.6 Ga 0.4 One active layer on As sacrificial layer, Al formed on three active layers 0.4 Ga 0.6 As layer and formed on Al 0.4 Ga 0.6 GaAs layer on top of the As layer.

[0070] As mentioned above, the active layer consists of In 0.15 Ga 0.85 As (InGaAs) quantum wells and confined in In 0.15 Ga 0.85 InAs quantum dots in As (indium gallium arsenide) quantum wells.

[0071] The thickness of the above-mentioned silicon substrate is 0.7um, the thickness of the defect suppression layer is 3um, the thickness of the GaAs buffer layer is 2.2um, the Al x Ga 1-x The thickness of As sacrificial layer is 1.3um, the thickness of one active layer is 350nm, Al 0.4...

Embodiment 2

[0078] A disc type laser device, comprising a silicon substrate, an InGaAs / GaAs superlattice defect suppression layer formed on the silicon substrate, a GaAs buffer layer formed on the defect suppression layer, and a GaAs buffer layer formed on the GaAs buffer layer al 0.6 Ga 0.4 As sacrificial layer, formed on the Al 0.6 Ga 0.4 Two active layers on As sacrificial layer, Al formed on three active layers 0.4 Ga 0.6 As layer and formed on Al 0.4 Ga 0.6 GaAs layer on top of the As layer.

[0079] As mentioned above, the active layer consists of In 0.15 Ga 0.85 As (InGaAs) quantum wells and confined in In 0.15 Ga 0.85 InAs quantum dots in As (indium gallium arsenide) quantum wells.

[0080] The thickness of the above-mentioned silicon substrate is 0.8um, the thickness of the defect suppression layer is 3.2um, the thickness of the GaAs buffer layer is 2.4um, the Al x Ga 1-x The thickness of the As sacrificial layer is 1.5um, the thickness of the two active layers is 355n...

Embodiment 3

[0083] A disc type laser device, comprising a silicon substrate, an InGaAs / GaAs superlattice defect suppression layer formed on the silicon substrate, a GaAs buffer layer formed on the defect suppression layer, and a GaAs buffer layer formed on the GaAs buffer layer al 0.6 Ga 0.4 As sacrificial layer, formed on the Al 0.6 Ga 0.4 Three active layers on As sacrificial layer, Al formed on three active layers 0.4 Ga 0.6 As layer and formed on Al 0.4 Ga 0.6 GaAs layer on top of the As layer.

[0084] As mentioned above, the active layer consists of In 0.15 Ga 0.85 As (InGaAs) quantum wells and confined in In 0.15 Ga 0.85 InAs quantum dots in As (indium gallium arsenide) quantum wells.

[0085] The thickness of the above-mentioned silicon substrate is 0.9um, the thickness of the defect suppression layer is 3.5um, the thickness of the GaAs buffer layer is 2.5um, the Al x Ga 1-x The thickness of the As sacrificial layer is 1.6um, the thickness of the three active layers i...

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Abstract

The invention discloses a disc-type laser device which includes a substrate, a defect suppression layer formed on the substrate, a buffer layer formed on the defect suppression layer, a sacrificial layer formed on the buffer layer and an active region formed on the sacrificial layer. The diameter of the disc-type laser device is 0.5-10 microns. The disc-type laser device of the invention includesthe substrate, the defect suppression layer formed on the substrate, the buffer layer formed on the defect suppression layer, the sacrificial layer formed on the buffer layer and the active region formed on the sacrificial layer, and the diameter of the disc-type laser device is 0.5-10 microns. The disc-type laser device is small and can be well applied to large-area and super-integrated silicon-based optical chips, and the disc-type laser device has excellent luminous intensity and threshold.

Description

technical field [0001] The invention relates to the technical field of optical communication, in particular to a disk-shaped laser device. Background technique [0002] Silicon photonics is a silicon-based optical communication technology. However, since silicon itself belongs to an inorganic semiconductor material with an indirect band gap, its luminescence performance is much worse than that of an inorganic semiconductor material with a direct band gap. Therefore, silicon-based optical chips usually need to be externally coupled with an inorganic semiconductor laser device as the light source required for optical communication, such as waveguide (FP) laser devices, distributed feedback (DFB) laser devices and vertical cavity surface (VCSEL) emitting lasers. pieces. However, this method will increase the coupling cost between the laser and the silicon chip, and the size of waveguide (FP) laser devices, distributed feedback (DFB) laser devices and vertical cavity surface (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/20
CPCH01S5/20H01S5/2004
Inventor 张昭宇周陶杰项国洪方铉项博媛
Owner THE CHINESE UNIV OF HONG KONG SHENZHEN
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