Lithographic plate based on pattern compensation and making method thereof

Abstract

The invention discloses a lithographic plate based on pattern compensation and a making method thereof. The making method includes the following steps: S1, forming a first layout on a lithographic plate; S2, using the lithographic plate with the first layout to carry out a lithographic process to obtain an actual pattern after lithography; S3, obtaining the pattern difference based on transverse etching according to the first layout and the actual pattern after lithography; S4, making pattern compensation for the first layout according to the pattern difference to obtain a second layout; and S5, forming the second layout on the lithographic plate. The original layout is compensated and corrected according to the pattern difference between the original layout and the actual pattern, the pattern size of transverse etching in the etching process is compensated into the lithographic plate layout, and an ideal target pattern can be formed by etching. The lithographic plate is applicable tothe process flow of various electronic devices.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photolithographic plate based on pattern compensation and a manufacturing method thereof. Background technique [0002] Reactive ion etching technology is currently widely used in the field of semiconductor manufacturing. Reactive ion etching generally implements pattern transfer through an etching process after performing a patterning process on the surface of the etched object. [0003] During the entire etching process, due to the existence of lateral etching, it is difficult to avoid the area that should not be etched due to lateral erosion, resulting in a large difference between the etched pattern and the target pattern. In the prior art, various process parameters in reactive ion etching are usually adjusted to reduce the influence of lateral etching as much as possible, but this method requires a large number of experiments to determine the experimen...

AI Technical Summary

Problems solved by technology

[0003] During the entire etching process, due to the existence of lateral etching, it is difficult to avoid the area that should not be etched due to lateral erosion, resulting in a large difference between the etched pattern and the target pattern

In the prior art, various process parameters in reactive ion etching are usually adjusted to reduce the influence of lateral etching as much as possible, but this method requires a large number of experiments to determine the experimental parameters

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