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Chalcogenide compound, production method thereof and thermoelectric element comprising same

A chalcogen element and compound technology, applied in the field of chalcogen-containing compounds, its preparation and thermoelectric elements containing it, can solve the problems of inability to exhibit phase stability, low thermal conductivity thermoelectric characteristics, poor phase stability, etc. , to achieve the effects of excellent phase stability, low thermal conductivity, and excellent thermoelectric properties

Active Publication Date: 2019-03-15
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, such chalcogen compounds are only stable in the temperature range of about 580 °C to 720 °C, and at lower temperatures, especially at the driving temperature of thermoelectric elements, they cannot behave due to decomposition into other phases. phase stability
[0010] Therefore, although the above-mentioned chalcogen compounds are expected to exhibit low thermal conductivity and excellent thermoelectric characteristics due to their face-centered cubic lattice structure containing a portion of vacant lattice sites, their temperature at about 580° C. or lower (corresponding to the general driving temperature of thermoelectric elements) exhibit poor phase stability, and thus have very limited applications as thermoelectric conversion materials

Method used

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  • Chalcogenide compound, production method thereof and thermoelectric element comprising same
  • Chalcogenide compound, production method thereof and thermoelectric element comprising same
  • Chalcogenide compound, production method thereof and thermoelectric element comprising same

Examples

Experimental program
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Effect test

Embodiment 1

[0072] Embodiment 1: the compound containing chalcogen (Na 0.2 sn 4 Bi 2 Se 7 ) preparation

[0073] Sn, Bi, Se and Na in a molar ratio of 4:2:6.9(7-0.1):0.1 in the glove box 2 The respective high-purity raw material powders of Se were weighed into carbon crucibles and then loaded into quartz tubes. The interior of the quartz tube is evacuated and sealed. The raw materials were kept at a constant temperature in an electric furnace at 620° C. for 24 hours.

[0074] Thereafter, the quartz tube in which the reaction was performed was cooled with water to obtain an ingot, which was finely ground into a powder having a particle diameter of 75 μm or less, and subjected to spark plasma sintering (SPS) at a temperature of 620° C. and a pressure of 50 MPa. Sintering was carried out for 10 minutes to prepare the chalcogen-containing compound Na 0.2 sn 4 Bi 2 Se 7 .

Embodiment 2

[0075] Embodiment 2: the compound containing chalcogen (Na 0.4 sn 4 Bi 2 Se 7 ) preparation

[0076] Prepare chalcogen-containing compound Na by the same method as in Example 1 0.4 sn 4 Bi 2 Se 7 , the difference is that Sn, Bi, Se and Na 2 The respective high-purity raw material powders of Se were mixed in a glove box at a molar ratio of 4:2:6.8(7-0.2):0.2.

Embodiment 3

[0077] Embodiment 3: the compound (Na 0.75 sn 4 Bi 1.7 Se 7 ) preparation

[0078] Prepare chalcogen-containing compound Na by the same method as in Example 1 0.75 sn 4 Bi 1.7 Se 7 , the difference is that Sn, Bi, Se and Na 2 The respective high-purity raw material powders of Se were mixed in a glove box at a molar ratio of 4:1.7:6.625(7-0.375):0.375.

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Abstract

The present invention relates to a novel chalcogen-containing compound that exhibits low thermal conductivity and excellent thermoelectric properties, and exhibits excellent phase stability even at relatively low temperature, a method for preparing the same, and a thermoelectric element including the same.

Description

technical field [0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2016-0142891 filed on October 31, 2016 and Korean Patent Application No. 10-2017-0134204 filed on October 16, 2017 with the Korean Intellectual Property Office, The disclosure thereof is incorporated herein by reference in its entirety. [0003] The present invention relates to a novel chalcogen-containing compound exhibiting low thermal conductivity and excellent thermoelectric characteristics, and a method for preparing the same, and a thermoelectric element comprising the same, and even It also exhibits excellent phase stability at relatively low temperatures. Background technique [0004] Due to recent environmental problems caused by resource depletion and combustion, research on thermoelectric conversion materials using waste heat as one of alternative energy sources is underway. [0005] The energy conversion efficiency o...

Claims

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Application Information

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IPC IPC(8): C01G29/00H01L35/16H01L35/18
CPCC01B19/02C01P2002/72C01P2006/32C01P2006/40H10N10/852C01G29/006C01P2004/38H10N10/853C01B19/002C01P2002/76C01P2002/77H10N10/01
Inventor 闵裕镐朴哲熙
Owner LG CHEM LTD
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