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Based on (al x ga 1-x ) 2 o 3 Ultraviolet photodetector with material msm structure and preparation method thereof

A technology of electrical detectors and ultraviolet light, applied in the field of microelectronics, can solve problems such as single spectral response range signals, and achieve the effect of improving sensitivity and utilization

Active Publication Date: 2020-06-19
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the commonly used ultraviolet photodetectors are MOS (metal-oxide-semiconductor) structures, and ultraviolet photodetectors with this structure can only detect signals within a relatively single spectral response range.

Method used

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  • Based on (al <sub>x</sub> ga <sub>1-x</sub> ) <sub>2</sub> o <sub>3</sub> Ultraviolet photodetector with material msm structure and preparation method thereof
  • Based on (al <sub>x</sub> ga <sub>1-x</sub> ) <sub>2</sub> o <sub>3</sub> Ultraviolet photodetector with material msm structure and preparation method thereof
  • Based on (al <sub>x</sub> ga <sub>1-x</sub> ) <sub>2</sub> o <sub>3</sub> Ultraviolet photodetector with material msm structure and preparation method thereof

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Embodiment 1

[0032] The MSM structure refers to a metal-semiconductor-metal structure, and the ultraviolet photodetector of the MSM structure refers to a metal-semiconductor-metal type ultraviolet photodetector. This structure is a "back-to-back" double Schottky barrier formed by planar linear interdigitated electrodes and semiconductor materials. The MSM type ultraviolet photodetector does not require p-type doping, and has the advantages of high responsivity, fast speed, small change with bias voltage, simple preparation process, low cost, and easy monolithic integration.

[0033] See figure 1 , figure 1 A kind of based on (Al x Ga 1-x ) 2 o 3 The schematic flow chart of the preparation method of the ultraviolet photodetector of material MSM structure, this method comprises the following steps:

[0034] Step a: select sapphire as the substrate material;

[0035] Step b: growing on the surface of the substrate material (Al x Ga 1-x ) 2 o 3 forming a light absorbing layer;

[0...

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Abstract

The invention relates to an ultraviolet photodetector based on an MSM structure of a (AlxGa1-x)2O3 material and a preparation method thereof. The preparation method comprises steps: sapphire is selected as a substrate material; (AlxGa1-x)2O3 grows on the surface of the substrate material to form an optical absorption layer; a mask is adopted to form an asymmetric interdigital electrode on the surface of the optical absorption layer, and thus, preparation of the ultraviolet photodetector with the MSM structure is completed. Through the preparation method disclosed in the invention, the ultraviolet photodetector with a high Al component can be obtained, two optical band gaps can be generated, two ultraviolet spectral ranges can be sensed, detection of the same detector on two optical bands is facilitied, and utilization of the ultraviolet photodetector is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a method based on (Al x Ga 1-x ) 2 o 3 Materials UV photodetector with MSM structure and its preparation method. Background technique [0002] In recent years, with the development of science and technology and the maturity of optoelectronic technology, ultraviolet photodetectors have been widely used in civilian and military fields. At present, the commonly used ultraviolet photodetector is a MOS (metal-oxide-semiconductor) structure, and the ultraviolet photodetector with this structure can only detect signals within a relatively single spectral response range. However, for optical wavelength division multiplexing technology, multi-spectral measuring instruments and laser warnings, etc., it is necessary to simultaneously detect optical signals in two or more spectral response ranges; therefore, the development of ultraviolet photodetectors with two or more spectral...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/032H01L31/108H01L31/18
CPCH01L31/022408H01L31/0321H01L31/1085H01L31/18Y02P70/50
Inventor 贾仁需董林鹏余建刚杨茜
Owner XIDIAN UNIV
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