Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Core-shell nanocrystal and preparation method thereof

A nanocrystal and core-shell technology, which is applied in the field of core-shell nanocrystal and its preparation, can solve problems affecting the development of quantum dots, surface shell shedding, surface ligand shedding, etc., to reduce interface defects, large energy band deviation, The effect of small lattice mismatch

Inactive Publication Date: 2018-12-28
嘉兴纳鼎光电科技有限公司
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such as poor optical stability, surface shell shedding, surface ligand shedding, lattice mismatch and other problems have affected the development of quantum dots in applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Core-shell nanocrystal and preparation method thereof
  • Core-shell nanocrystal and preparation method thereof
  • Core-shell nanocrystal and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0026] The embodiment of the present invention also provides a preparation method of core-shell nanocrystals, including:

[0027] Provide cadmium-containing quantum dot cores;

[0028] Coating a transition layer and a shell layer on the quantum dot core, the shell layer includes In x Zn y S 1-x-y Shell, where 0<X<1, 0<Y<1.

[0029] In some embodiments, the following steps are included:

[0030] (1) providing the first liquid phase reaction system comprising the quantum dot core;

[0031] (2) Adjust the temperature of the first liquid-phase reaction system to the first temperature, add a cadmium source and a sulfur source, and react to form a second liquid-phase reaction system. The second liquid-phase reaction system includes a surface coated with a transition layer of cadmium-containing quantum dots;

[0032] (3) Adjust the temperature of the second liquid-phase reaction system to the second temperature, add a zinc source and a sulfur source, and react to form a third l...

Embodiment 1

[0099] 1. Add 10ml of Cd(OA) 2 , 100mlZn(OA) 2 Put 200ml of ODE in a 1000ml three-necked flask, heat up to 120°C and evacuate until there are no bubbles. After obtaining a colorless transparent liquid, blow argon and heat up to 300°C. Rapidly inject 20ml of Se-ODE0.2M at 300°C. After maintaining 300° C. for 30 minutes, the temperature was lowered to complete the reaction to obtain a CdZnSe solution.

[0100] 2. Lower the temperature to 250°C and add 5ml of Cd(OA) dropwise 2 , 0.5ml TOPS, react for 30min, grow CdS layer.

[0101] 3. Cool down to 220°C, add 5ml Zn-OLAM and 0.5ml TOPS dropwise, react for 30min, and grow the ZnS layer.

[0102] 4. Heat up to 300°C, add dropwise 2ml of TOPIn, 5ml of Zn-OLAM, 4ml of TOPS, grow an InZnS layer, and react for 30 minutes to obtain the final product.

Embodiment 2

[0104] 1. Add 10ml of Cd(OA) 2 , 100mlZn(OA) 2 Put 200ml of ODE in a 1000ml three-necked flask, heat up to 120°C and evacuate until there are no bubbles. After obtaining a colorless and transparent liquid, blow argon and heat up to 310°C. After injecting 20ml of Se-ODE0.2M at 310°C, After maintaining 300° C. for 30 minutes, the temperature was lowered to complete the reaction to obtain a CdZnSe solution.

[0105] 2. Lower the temperature to 200°C and add 5ml of Cd(OA) dropwise 2 , 0.5ml TOPS, react for 60min, grow CdS layer.

[0106] 3. Adjust the temperature to 320°C, add 5ml Zn-OLAM and 0.5ml TOPS dropwise, and react for 60min to grow the ZnS layer.

[0107] 4. Adjust the temperature to 320°C, add dropwise 4ml of TOPIn, 5ml of Zn-OLAM, and 6ml of TOPS to grow an InZnS layer, and react for 30 minutes to obtain the final product.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a core-shell nanocrystal. The core-shell nanocrystal comprises a Cd-containing quantum dot core and a shell layer coating the quantum dot core, wherein the shell layer comprises an InxZnyS(1-x-y) shell layer, x is larger than 0 and smaller than 1, and y is larger than 0 and smaller than 1. The invention also discloses a preparation method of the core-shell nanocrystal. Thepreparation method comprises steps as follows: providing the Cd-containing quantum dot core; coating the quantum dot core with a transition layer and the shell layer, wherein the shell layer comprisesan InxZnyS(1-x-y) shell layer, x is larger than 0 and smaller than 1, and y is larger than 0 and smaller than 1. In the preparation method of the core-shell nanocrystal, an In-Zn-S layer grows in theshell layer coating Cd-series quantum dots, the energy level matching degree of the Cd quantum dot core layer and the matching degree of lattice constants and bandwidth of the shell layer can be notably improved, the nanocrystal structure is more compact, and accordingly, the quantum efficiency, the optical performance and the stability of the nanocrystal are improved.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a core-shell nanocrystal and a preparation method thereof. Background technique [0002] Quantum dots are quasi-zero-dimensional nanomaterials whose size can be adjusted from 1-20nm. By controlling the size of quantum dots to achieve changes in the photoelectric properties of materials, these have improved the application fields of quantum dots. In the past 30 years of research, II-VI quantum dots have gradually become more perfect, and III-V quantum dots have also improved. But there are still many problems to be solved in the preparation of quantum dots. Problems such as poor optical stability, shedding of surface shells, shedding of surface ligands, and lattice mismatch have affected the development of quantum dots in applications. [0003] In order to achieve certain properties of quantum dots and solve problems such as quantum dot luminescence and stabili...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y40/00
CPCC09K11/02C09K11/883B82Y20/00B82Y40/00
Inventor 张超李霞张孟
Owner 嘉兴纳鼎光电科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products