Cadmium stannate-based transparent conductive film, production process thereof and solar cell
A technology of transparent conductive film and production process, applied in the field of solar cells, can solve the problems of increasing the production cost of the film material, increasing the difficulty, contaminating the CTO film layer, etc.
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Embodiment 1
[0067] 1.1 Preparation of cadmium stannate-based transparent conductive film (CTO-CdS):
[0068] (1)a. With SnO 2 -CdO as the target (SnO 2 The molar ratio to CdO is 33:67), the glass substrate is placed in the magnetron sputtering chamber, and the sputtering distance between the target and the substrate is adjusted to be 6.7cm;
[0069] b. Vacuum the sputtering chamber until the vacuum degree is ≤2.5E-6Torr;
[0070] c. Introduce gas (Ar and O) into the sputtering chamber 2 ), Ar flow is 72sccm, O 2 The flow rate is 8sccm, so that the air pressure in the sputtering chamber is kept at 10mTorr;
[0071] d. Using radio frequency sputtering, the sputtering power is 484W, the radio frequency is 13.56MHz, and the sputtering is 9.5min, and the precursor CTO base film is deposited on the glass substrate (denoted as 1-0#);
[0072] e. Replace the target material and use CdS as the target material;
[0073] f. Vacuum the sputtering chamber to a vacuum degree ≤2.5E-6Torr;
[0074] ...
Embodiment 2
[0092] 1.1 Preparation of cadmium stannate-based transparent conductive film (CTO-Al):
[0093] (1)a. With SnO 2 -CdO as the target (SnO 2 The molar ratio to CdO is 33:67), the glass substrate is placed in the magnetron sputtering chamber, and the sputtering distance between the target and the substrate is adjusted to be 6.7cm;
[0094] b. Vacuum the sputtering chamber until the vacuum degree is ≤2.5E-6Torr;
[0095] c. Introduce gas (Ar and O) into the sputtering chamber 2 ), Ar flow is 72sccm, O 2 The flow rate is 8sccm, so that the air pressure in the sputtering chamber is kept at 10mTorr;
[0096] d. Using radio frequency sputtering, the sputtering power is 485W, the radio frequency is 13.56MHz, and the sputtering is 9.5min, and the precursor CTO base film is deposited on the glass substrate (denoted as 2-0#);
[0097] e. Replace the target material and use the Al target as the target material;
[0098] f. Vacuum the sputtering chamber to a vacuum degree ≤ 1.5E-4Pa; ...
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