Substrate processing apparatus
A substrate processing device and processing location technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problem of lowering the temperature of the liquid medicine, and achieve the effect of reducing uneven processing
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no. 1 approach >
[0049] figure 1 It is a schematic plan view for explaining the internal layout of the substrate processing apparatus 1 of the first embodiment of the present invention.
[0050] The substrate processing apparatus 1 is a single-sheet apparatus that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disc-shaped substrate. The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing substrates W with processing liquids such as chemical solutions and rinse liquids; a loading port LP, a container C for holding a plurality of substrates W processed in the processing unit 2; The robots IR and CR transport the substrate W between the load port LP and the processing unit 2; and the controller 3 controls the substrate processing device 1. The transfer robot IR transfers the substrate W between the container C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer r...
no. 2 approach >
[0133] Next, the second embodiment of the present invention will be described. Figure 13 It is a cross-sectional view of the first chemical liquid nozzle 30 of the second embodiment. Figure 13 It is a cross-sectional view when the first chemical liquid nozzle 30 is cut along a plane orthogonal to the longitudinal direction L. in Figure 13 Here, the same reference numerals are given to the same members as the members described so far, and the description is omitted.
[0134] In the first chemical liquid nozzle 30 of the second embodiment, unlike the first embodiment, the lower surface 30d of the first chemical liquid nozzle 30 is not provided with a step 30g, and the lower surface 30d is a flat surface. Furthermore, the first ejection port 30a is formed on the lower surface 30d. Therefore, the first ejection port 30 a is located below the bottom 71 a of the liquid accumulation portion 71. Since the lower surface 30d of the first chemical liquid nozzle 30 is a flat surface, the...
no. 3 approach >
[0136] Next, a third embodiment of the present invention will be described. Figure 14 It is a bottom view of the first chemical liquid nozzle 30 of the third embodiment. in Figure 14 Here, the same reference numerals are given to the same members as the members described so far, and the description is omitted.
[0137] In the first chemical liquid nozzle 30 of the third embodiment, unlike the first embodiment, the first discharge port 30a near the other end 70b of the first flow path 70 is higher than the first discharge port 30a near the one end 70a of the first flow path 70. The ejection port 30a is large. The diameter d2 of the first ejection port 30a near the other end 70b is larger than the diameter d1 of the first ejection port 30a near the one end 70a of the first flow path 70. That is, as in the first embodiment, the plurality of first ejection ports 30a are provided so that the flow rate of the chemical liquid supplied to the outer peripheral area of the upper surfa...
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