A kind of encapsulation method and encapsulation structure

A packaging material and a part of the technology, applied in the field of a method and the packaging structure using this method, can solve the problems of wet process implementation obstacles, wet process complexity, danger, etc., achieve a firm and stable packaging structure, and avoid packaging Ineffectiveness, the effect of strengthening the binding force

Active Publication Date: 2020-05-29
上海稷以科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, these wet processes are very complicated, and usually require pre-treatment of the sample, and high-temperature baking and curing after spraying
More importantly, these processes all require a large amount of solvents, and the proportion of these solvents (IPA or alcohol) in the entire chemical formula is very high (>90%), so it will produce extremely serious pollution and is also very dangerous, thus providing Widespread implementation of wet processes creates barriers

Method used

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  • A kind of encapsulation method and encapsulation structure
  • A kind of encapsulation method and encapsulation structure
  • A kind of encapsulation method and encapsulation structure

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Experimental program
Comparison scheme
Effect test

specific Embodiment approach

[0037] The specific embodiment of the present invention comprises the following steps:

[0038] S1: Send the semiconductor substrate sample into the vacuum chamber, expose at least a part of the surface of the substrate, turn on the vacuum system, pump the vacuum chamber to the back pressure, and make the vacuum degree of the backside 0.1-10000Pa; as a preference, the backside vacuum The degree is 1-100Pa. This step can provide a clean process environment for subsequent processes.

[0039] S2: Activation and cleaning of the substrate surface: the gas used for plasma activation is introduced into the vacuum chamber, specifically, it may contain oxygen, nitrogen, carbon monoxide, carbon dioxide, hydrogen, argon or helium, and preferably contains oxygen or argon. At the same time, turn on the radio frequency power supply, the radio frequency power is 10-10000W, the pulse voltage frequency is 1-10000Hz, and the duty cycle is 1-100%; as a preference, the radio frequency power is ...

Embodiment 1

[0058] S1: After the substrate (polyimide substrate) is sent into the vacuum chamber, the vacuum system is turned on, and the vacuum chamber is pumped to the back pressure, so that the vacuum degree of the back of the vacuum chamber is 100Pa, providing a clean process for the subsequent process environment.

[0059] S2: Plasma activation: Oxygen is introduced into the vacuum chamber; at the same time, the radio frequency power supply is turned on, the radio frequency power is 800W, the pulse voltage frequency is 150Hz, and the duty cycle is 50%; plasma is generated by excitation.

[0060] S3: Plasma deposition: the following chemicals (compound 1) are introduced into the plasma chamber:

[0061]

[0062] After the gas flow is stable, when the pressure is stabilized in the range of 1-10000T, turn on the radio frequency plasma, the radio frequency power is 7000W, the pulse frequency is 500KHz, the pulse voltage frequency is 1000KHz, and the duty cycle is 50%. Through the abov...

Embodiment 2

[0065]S1: After sending the orthosilicate coated substrate (TEOS coated substrate) into the vacuum chamber, the vacuum system is turned on, and the vacuum chamber is pumped to the back pressure, so that the vacuum degree of the back of the vacuum chamber is 50Pa, which is for the subsequent Process provides a clean process environment.

[0066] S2: Plasma activation: argon gas is introduced into the vacuum chamber; at the same time, the radio frequency power supply is turned on, the radio frequency power is 50W, the pulse voltage frequency is 100Hz, and the duty cycle is 80%, to generate plasma.

[0067] S3: Plasma deposition: the following chemicals (compound 2) are introduced into the plasma chamber:

[0068]

[0069] After the gas flow is stable, when the pressure is stable within the range of 1-10000T, turn on the radio frequency plasma, the radio frequency power is 2000W, the pulse frequency is 200KHz, the pulse voltage frequency is 300KHz, and the duty cycle is 15%. ...

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Abstract

The invention provides a packaging method and a package structure adopting the method. The packaging method provided in the invention is characterized in that at least part of a surface of a substrateis exposed to a plasma, and plasma activation and plasma deposition are sequentially performed so that a compound represented by a formula (I) forms a plasma deposition layer on the surface of the substrate, so a bonding force between the substrate and a packaging material can be effectively improved, and a package failure caused by delamination between the substrate and the packaging material isprevented. In addition, according to the method provided by the invention, the plasma activation and the plasma deposition on the surface of the substrate are completed in the same cavity and in thesame process, the plasma deposition layer formed on the surface of the substrate by the method is solid and requires no additional curing, and then the overall packaging process is convenient and faster.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to a packaging method and a packaging structure using the method. Background technique [0002] In the field of semiconductor packaging, the requirements for the reliability of the combination of the substrate and the molding compound are getting higher and higher. In order to improve the bonding force between the substrate and the molding compound, wet chemical reactions are used in the prior art to combine the substrate and the molding compound. , that is, the Adhesion Promoter diluted with solvent is sprayed onto the surface of the substrate. [0003] However, these wet processes are very complicated, and usually require pre-treatment of the sample, and high-temperature baking and curing after spraying. More importantly, these processes all require a large amount of solvents, and the proportion of these solvents (IPA or alcohol) in the entire chemical formula is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/56H01L21/263H01L23/31H01L23/29
CPCH01L21/263H01L21/561H01L23/293H01L23/31H01L23/3142
Inventor 王俊杨平
Owner 上海稷以科技有限公司
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