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Micro-disk Raman laser device and manufacturing method thereof

A Raman laser and manufacturing method technology, applied in the laser field, can solve the problems of low etching accuracy and poor repeatability, and achieve the effects of improving etching accuracy, facilitating on-chip integration, and strong process repeatability

Active Publication Date: 2018-11-30
NANJING UNIV
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Problems solved by technology

[0006] The invention provides a micro-disk Raman laser and its manufacturing method to solve the problems of low etching precision and poor repeatability of existing micro-cavity Raman lasers

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  • Micro-disk Raman laser device and manufacturing method thereof
  • Micro-disk Raman laser device and manufacturing method thereof
  • Micro-disk Raman laser device and manufacturing method thereof

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Embodiment Construction

[0038] The present invention will be further described in detail below with reference to the drawings and embodiments. It can be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for ease of description, the drawings only show a part but not all of the structure related to the present invention.

[0039] The embodiment of the present invention provides a method for manufacturing a microdisk Raman laser, reference figure 1 , figure 1 It is a schematic flow chart of a method for manufacturing a microdisk Raman laser provided by an embodiment of the present invention. The method for manufacturing a microdisk Raman laser includes:

[0040] S101. Coating photoresist on a substrate; wherein the substrate includes a semiconductor base, and an oxide semiconductor layer is formed on the semiconductor base.

[0041] reference figure 2 , figure 2 It is a schemat...

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Abstract

The embodiment of the invention discloses a micro-disk Raman laser device and a manufacturing method thereof. The micro-disk Raman laser device comprises a base plate coated with a photoresist, wherein the base plate comprises a semiconductor substrate; an oxide semiconductor layer is formed on the semiconductor substrate; a mask plate provided with a circular hollow pattern is used as a mask to photoetch and develop the photoresist to obtain a photoresist disk; the photoresist disk is used as a mask to perform plasma etching on the oxide semiconductor layer to obtain an oxide semiconductor micro-disk; the photoresist disk on the oxide semiconductor micro-disk is cleaned; and the oxide semiconductor micro-disk is used as a mask to etch the semiconductor substrate to form a supporting column which supports the oxide semiconductor micro-disk. The technical scheme provided by the embodiment of the invention can solve the problems of low etching precision and low repetitiveness of an existing micro-cavity Raman laser device.

Description

Technical field [0001] The embodiment of the present invention relates to the field of laser technology, in particular to a microdisk Raman laser and a manufacturing method thereof. Background technique [0002] The Raman laser can be formed by a certain frequency of laser in a certain way and degree of resonance in the optical microcavity. The whispering gallery mode optical microcavity is a tiny device that can confine the beam to a certain size of space and time. Because it has a higher quality factor Q and a smaller mode volume, it can greatly reduce the stimulated emission laser The power threshold can achieve extremely low threshold whispering gallery mode Raman laser. Raman lasers have great application potential in optical platforms, and have important applications in spectral analysis, laser sensing, optical communications, and environmental monitoring. [0003] In the prior art, a silicon oxide microsphere cavity is used to achieve an ultra-low threshold Raman laser wit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/02
CPCH01S5/0203H01S5/0206
Inventor 姜校顺李昊程欣宇顾佳新肖敏
Owner NANJING UNIV
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