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A multilayer film photodetector based on optical singular point design and its detection method

A technology of optical detectors and detection methods, which is applied in the field of optical detectors, can solve the problems that non-Hermitian Hamiltonian does not have real eigenvalues, etc., and achieve the effects of novel detection methods, large material selection range, and high detection sensitivity

Active Publication Date: 2020-06-05
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Another important reason is that the research on the imaginary part is often ignored, that is, the early quantum theory believed that only the Hermitian Hamiltonian has real eigenvalues, and the non-Hermitian Hamiltonian including the imaginary part does not have a stable The real eigenvalues ​​that exist

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  • A multilayer film photodetector based on optical singular point design and its detection method
  • A multilayer film photodetector based on optical singular point design and its detection method
  • A multilayer film photodetector based on optical singular point design and its detection method

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Embodiment

[0028] The multilayer photodetector designed based on the singular point of the non-Hermitian optical system in this embodiment is a multilayer film structure prepared by plasma-enhanced chemical vapor deposition on a quartz glass substrate, and the non-loss material is silicon dioxide. The lossy semiconductor material is amorphous silicon. In the 532nm communication band, the refractive index of silicon dioxide is 1.46, and the refractive index of silicon is 4.8+0.68i. A multilayer film takes four layers of film as a structural unit. The thickness is precisely regulated by the particle swarm optimization algorithm, when H 1 、H 2 、H 3 and H 4 When the thickness is 18.9252 nanometers, 7.3810 nanometers, 32.8582 nanometers and 23.999 nanometers, the 532-nanometer communication band shows a singular phenomenon of one-way non-reflection, which has a strong dependence on the film thickness. The number of structural units selected in this embodiment is 6. Such as image 3 The ...

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Abstract

The invention discloses a multilayer film photodetector based on optical singular point design and a detection method thereof. The multilayer film photodetector comprises a substrate and a multilayerfilm arranged on the substrate, wherein the substrate is an optical material with transparent communication wave band; and the multilayer film is provided with the optical singular point, and a one-dimensional periodic array is formed by alternately arranging lossless optical materials and lossy optical semiconductor materials, four layers of films are used as a structural unit. The real refractive index, imaginary refractive index and film thickness of the material are accurately regulated and controlled according to the characteristic matrix of light transmission in the multilayer film, so that a unidirectional non-reflection phenomenon that one side reflectivity is not zero and the other side reflectivity is theoretically zero occurs in the detector structure at a specific wavelength. When an external light source is incident on the detector, the refractive index of the semiconductor material changes due to the photoelectric effect, reflection appears at the non-reflective end, so that the purpose of detecting the external light source is achieved. The multilayer film photodetector based on the optical singular point design has the advantages of novel and intuitive detection technology, high sensitivity, good stability and low cost of required detection equipment.

Description

technical field [0001] The invention belongs to the field of optical detectors, and in particular relates to a multilayer film optical detector designed based on a singular point of a non-Hermitian optical system and a detection method thereof. Background technique [0002] Optical detection technology relies on the interaction of light and matter, and thus depends on the adjustable degrees of freedom of the matter itself. The degree of freedom contained in the material itself generally includes common material parameters such as dielectric constant, magnetic permeability, photoelectric response, and so on. Among them, the dielectric constant is an important part of optical detection. In most of the previous studies, the design of structures and devices was mainly based on the ingenious regulation of the real part of the dielectric constant of the material, resulting in the birth of devices such as photonic crystal microcavities, waveguide arrays, and whispering gallery cav...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/42G01J1/04
CPCG01J1/0437G01J1/42
Inventor 卢明辉刘莉朱学艺
Owner NANJING UNIV
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