Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for reducing the density of silicon carbide epitaxial surface defects

A technology of defect density and silicon carbide, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effect of eliminating surface defects, reducing surface defect density, and reducing unintentional damage

Active Publication Date: 2018-11-23
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after the conventional etching process, there are still a certain amount of surface defects introduced by the substrate on the surface of the epitaxial wafer after epitaxy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for reducing the density of silicon carbide epitaxial surface defects
  • Method for reducing the density of silicon carbide epitaxial surface defects

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0024] Such as figure 1 As shown, the method for reducing the surface defect density of silicon carbide epitaxy described in the present invention comprises steps:

[0025] (1) Place the cleaned SiC substrate on the pedestal in the chemical vapor deposition (CVD) equipment. The silicon carbide substrate can be a 3-8 inch silicon carbide substrate that is 4° to the direction;

[0026] (2) set reaction chamber pressure to be 80-150mbar, hydrogen (H 2 ) The flow rate is 80-150L / min, and the system heats up to a temperature of 1400-1500°C;

[0027] (3) Keep the temperature and reaction chamber pressure constant, and perform pure hydrogen etching on the substrate for 1-10 minutes;

[0028] (4) Keep the pressure and H 2 The flow rate is constant, and a small flow rate of argon (Ar) is introduced into the reaction chamber to ass...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for reducing the density of silicon carbide epitaxial surface defects, a silicon carbide substrate is treated by in-situ composite etching with hydrogen-argon mixed atmosphere before epitaxial growth, by introducing relatively mild argon gas, the problem of large surface damage caused by pure hydrogen etching is solved, compared with pure hydrogen etching, the temperature field is more uniform, and the surface instability of the substrate in the initial epitaxial stage is reduced or even eliminated while the damaged layer introduced by the chemical mechanical polishing of the substrate is effectively treated, so that the defects of the surface extended into the epitaxial layer due to the substrate are greatly reduced, and the surface defect density in the epitaxial layer can be effectively reduced. The method of the invention is simple, feasible and compatible with the existing epitaxial process, and has high popularization value.

Description

technical field [0001] The invention belongs to the technical field of semiconductor epitaxy materials, in particular to a method for reducing the surface defect density of silicon carbide epitaxy. Background technique [0002] Among the third-generation wide-bandgap semiconductor materials, silicon carbide (SiC) has excellent physical and electrical properties such as wide-bandgap, high breakdown field strength, and high thermal conductivity, making it widely used in high-temperature, high-voltage, and high-frequency devices. It has a very broad application prospect. 4H-SiC is the material with the best performance among SiC polytypes. It has a larger band gap, bulk electron mobility, and smaller anisotropy. It is the material of choice for the development of power electronic devices. [0003] At present, SiC power electronic devices have been widely used in hybrid electric vehicles, electric vehicle equipment, SiC device power modules, SiC inverter air conditioners, SiC i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/04
CPCH01L21/02378H01L21/02529H01L21/0262H01L21/02634H01L21/02661H01L21/0445
Inventor 赵志飞李赟王翼李忠辉
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com