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Silicon carbide MOSFET device and manufacturing method thereof

A silicon carbide and device technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as low work efficiency, high power loss, and poor robustness

Active Publication Date: 2018-11-13
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention needs to be solved, that is, aiming at the above-mentioned problems, it is proposed to propose a method that can optimize the poor robustness, high power loss, and poor workability caused by the excessive electric field of the gate dielectric layer in the application of silicon carbide MOSFET devices such as inverter circuits and chopper circuits. Silicon carbide MOSFET device with low efficiency, high production cost and other problems and its manufacturing method

Method used

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  • Silicon carbide MOSFET device and manufacturing method thereof
  • Silicon carbide MOSFET device and manufacturing method thereof
  • Silicon carbide MOSFET device and manufacturing method thereof

Examples

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Embodiment 1

[0074] A silicon carbide MOSFET device such as figure 2 As shown, the cell structure includes drain metal 1, silicon carbide N + Substrate 2 and SiC N - epitaxial layer 3; the silicon carbide N - There is a source trench above the epitaxial layer 3, and the source trench is filled by deposition of Schottky contact metal 12 or polysilicon 13, and the Schottky contact metal 12 or polysilicon 13 is in direct contact with the silicon carbide N- epitaxial layer 3, Form a Schottky contact or Si / SiC heterojunction contact with rectification characteristics; the left and right sides of the Schottky contact metal 12 on the semiconductor surface are respectively embedded with a silicon carbide deep P-doped region 4, and the two silicon carbide deep The depth of the P-doped region 4 is deeper than the bottom of the Schottky contact metal 12, the top left of the Schottky contact metal 12 is silicon carbide deep P-doped region 4, and the right side of the Schottky contact metal 12 is de...

Embodiment 2

[0076] Such as image 3 As shown, this embodiment is roughly the same as Embodiment 1, except that the structure does not have a silicon carbide P+ contact region 14, but on the upper left of the silicon carbide N- epitaxial layer 3, the silicon carbide Pbase region 7 and the carbide The left side of the silicon N+ source region 8 has a silicon carbide deep P-doped region 4 , and the silicon carbide deep P-doped region 4 has the same depth as the silicon carbide deep P-doped region 4 near the gate structure. This improvement helps to strengthen the protection of the silicon carbide deep P-doped region 4 on the semiconductor surface structure, so that the long-term application reliability of the device is improved.

Embodiment 3

[0078] The structure of this embodiment is substantially the same as that of Embodiment 1, except that the Schottky contact metal 12 region used is replaced by polysilicon 13, as Figure 4 shown. Also, a Si / SiC heterojunction structure with a rectifying contact is formed on the bottom sidewall of the source trench and the silicon carbide N- epitaxial layer 3 . The forward conduction voltage drop Von of the heterojunction structure is about 1.1V, which also has a good effect on improving the operation of the third quadrant of the device. At the same time, since the heterojunction is a multi-sub-device, the diode has good reverse recovery performance.

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Abstract

The invention provides a silicon carbide MOSFET device and a manufacturing method thereof. Discontinuous gate structures are formed on the basis of the common silicon carbide MOSFET structure, two silicon carbide deep P injection regions are introduced between the two gate structure and metal or polycrystalline silicon is introduced between the two silicon carbide deep P injection regions. The metal or the polycrystalline silicon directly contacts the silicon carbide N-epitaxy so as to form the Schottky contact or the heterojunction contact having the rectification characteristic. The improvement greatly optimizes the conventional silicon carbide UMOSFET basic characteristics, realizes integration of multiple sub-rectifiers and greatly optimizes the third quadrant performance of the device. Meanwhile, the silicon carbide MOSFET device has the characteristics of low Miller capacitance, simple process and easy implementation.

Description

technical field [0001] The invention belongs to power semiconductor technology, in particular, relates to a metal oxide semiconductor field effect (MOSFET) device structure and a manufacturing method thereof. Background technique [0002] The development and efficient utilization of energy resources is an eternal theme of human development. Since human history entered the 21st century, the world's energy production and consumption are still dominated by fossil energy. Combined with the current development and utilization of energy resources, fossil energy will still be the energy basis for human survival and development in a relatively long period of time. However, fossil energy will eventually be exhausted, and it is easy to cause environmental pollution problems. The resulting environmental and sustainable development problems are difficult problems that human beings must face. Electric energy is one of the main forms of energy available to human beings, and improving it...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/16H01L29/66H01L29/78
CPCH01L29/0603H01L29/1608H01L29/66477H01L29/78
Inventor 张金平邹华赵阳罗君轶李泽宏张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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