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Mask and production method thereof

A manufacturing method and mask technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problem that the small size can only reach 25 μm to 40 μm, and the quality and accuracy of the metal mask are not very good. To meet the requirements of process requirements and other issues, to achieve the effect of reducing etching damage, reducing thickness, and improving the accuracy of through holes

Active Publication Date: 2018-10-09
NINGBO SEMICON INT CORP
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] At present, the metal mask plate of OLED (Organic Light-Emitting Diode, organic light-emitting display) is usually made of Invar alloy (INVAR, also known as Invar) with a thickness of 30 μm to 50 μm and is prepared by chemical etching. The surface of the alloy is coated with photoresist or photosensitive dry film, and the fine pattern of the mask plate is transferred to the photosensitive film by exposure, and finally a fine metal mask plate is made by means of development and chemical etching. Its precision is usually at the micron level, and generally the minimum can only be 25 μm to 40 μm, so the quality and accuracy of the metal mask made cannot well meet the requirements of the process

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Embodiment Construction

[0019] It can be seen from the background art that the quality and accuracy of the metal mask cannot well meet the requirements of the process.

[0020] In order to solve the technical problem, the present invention uses semiconductor processes such as deposition, photolithography and etching to make a mask. Compared with the metal mask made by traditional chemical etching, the semiconductor process can improve the The quality and accuracy of the through hole of the mask, thereby improving the quality and accuracy of the mask.

[0021] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0022] figure 1 It is a structural schematic diagram of an embodiment of the mask plate of the present invention.

[0023] In this embodiment, the mask plate includes: a substrate 10, the substrate 10 includes a ...

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Abstract

The invention discloses a mask and a production method thereof. The mask comprises a substrate, a mask pattern layer and a sacrificial layer, wherein the substrate comprises a first surface and a second surface opposite to the first surface; a plurality of openings running through the substrate are formed in the substrate; the substrate can be patterned by a semiconductor etching technology; the mask pattern layer is positioned on the first surface; the mask pattern layer comprises adjacent pattern areas and blocked areas; each pattern area is provided with at least one through hole running through the mask pattern layer; the openings expose the pattern areas, and each pattern area corresponds to the corresponding opening; the sacrificial layer is positioned between the substrate and the mask pattern layer. The mask is produced by a semiconductor technology; compared with a metal mask produced in the conventional chemical etching way, the mask produced by the semiconductor technology has the advantages as follows: the quality of the mask and the precision of the through holes can be improved, reduction in the size of the through holes and the thickness of the mask pattern layer isfacilitated, the mask pattern layer and the substrate can be prevented from displacement, and the quality and the precision of the mask are relatively high.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a mask plate and a manufacturing method thereof. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) technology is mainly divided into two types: evaporation (Evaporation) process and sputtering (Sputtering) process. Among them, the evaporation process is the main way to form a functional film layer on the surface of the substrate. The evaporation process refers to heating and melting the evaporation source (such as metal, alloy or compound to be plated) in a vacuum evaporation machine (Vacuum Evaporator), so that It escapes in the form of molecules or atoms, and is deposited on the surface of the substrate to form a solid film or coating. [0003] At present, the evaporation process mainly adopts a metal mask (Metal Mask), and the metal mask has a predetermined pattern of through holes. During the evaporation process, the metal mas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/04C23C14/12C23C14/24
CPCC23C14/042C23C14/12C23C14/24
Inventor 刘孟彬罗海龙
Owner NINGBO SEMICON INT CORP
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