Small-area reference circuit in Internet of Things

A benchmark circuit, small area technology, applied in the direction of adjusting electrical variables, instruments, control/regulating systems, etc., can solve problems such as high power consumption and large chip area

Inactive Publication Date: 2018-09-28
丹阳恒芯电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional method can be designed with a bandgap reference circuit, but its power consumption is relatively large, and resistors and transistors are needed, resulting in a large chip area

Method used

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  • Small-area reference circuit in Internet of Things

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Embodiment Construction

[0012] combine figure 1 As shown, in the following embodiments, the small-area reference circuit includes: a start-up circuit for completing the start-up of the reference circuit to avoid an undesired zero-current state; an independent power supply bias circuit for A positive temperature coefficient current reference is generated; a core reference circuit is biased in the sub-threshold region to generate core reference current and reference voltage, and the accuracy of generating the reference voltage is very high.

[0013] The start-up circuit is composed of a first capacitor C1 and a first enhanced PMOS transistor PM1; one end of the capacitor C1 is connected to the power supply voltage VDD, and when the power is turned on, the power supply voltage VDD is a high voltage, and the voltage across the capacitor C1 will not change suddenly , the PM1 tube is turned on, the gate voltage of the PM1 tube is pulled down, and the PM2 tube, PM3 tube, PM4 tube, PM5 tube, PM6 tube and PM7...

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Abstract

The invention discloses a small-area reference circuit in the Internet of Things. The reference circuit comprises a staring circuit, a power supply independent biasing circuit and a core reference circuit, wherein the starting circuit is used for completing the starting of the reference circuit and avoiding an undesired zero current state; the power supply independent biasing circuit is used for generating current reference with a positive temperature coefficient; the core reference circuit is inclinedly arranged in the subthreshold area and generates core reference current and reference voltage, and the accuracy of the generated reference voltage is higher. According to the small-area reference circuit, all MOS tubes adopt strengthening-type MOS tubes, the strengthening-type MOS tubes arenot sensitive to temperature changes, energy consumption is lower, and as a result of the subthreshold state of MOSFET, high tolerance to power and technology changes is achieved.

Description

technical field [0001] The invention relates to the field of reference voltage circuits, in particular to a small-area reference circuit in the Internet of Things. Background technique [0002] In the Internet of Things and most wireless communication applications, the relevant receiving circuits or transmitting circuits require low power consumption, so a reference circuit that can generate low power consumption is very critical and necessary for the entire application. As an important part of the analog circuit, the reference circuit generally needs to work normally in a wide temperature range. Therefore, not only low power consumption is required, but also stable performance and good temperature characteristics are required. The traditional method can be designed with a bandgap reference circuit, but its power consumption is relatively large, and resistors and transistors are needed, resulting in a large chip area. Contents of the invention [0003] In order to overcom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 陈磊
Owner 丹阳恒芯电子有限公司
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