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A method for preparing ito nanowires and gas sensors thereof by sputtering with high radio frequency power

A technology of radio frequency power and nanowires, which is applied in the field of gas sensor to achieve the effects of stable performance, simple preparation process and low preparation cost

Active Publication Date: 2020-03-17
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing ITO nanowires and gas sensors thereof by sputtering with high radio frequency power, so as to solve the following problems in the prior art: the first is to realize the high-speed preparation of magnetron sputtering under high radio frequency power ITO nanowires; the second is to simplify the preparation process for the shortcomings of the existing ITO nanowires for gas sensor preparation

Method used

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  • A method for preparing ito nanowires and gas sensors thereof by sputtering with high radio frequency power
  • A method for preparing ito nanowires and gas sensors thereof by sputtering with high radio frequency power
  • A method for preparing ito nanowires and gas sensors thereof by sputtering with high radio frequency power

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Embodiment 1

[0030] The key of the invention lies in the preparation of ITO nanowires by high radio frequency power magnetron sputtering. In order to prepare ITO nanowire gas sensors with good performance, it is necessary to continuously adjust the process parameters of magnetron sputtering, so that the growth of nanowires can be carried out without a catalyst.

[0031] The invention provides a method for preparing ITO nanowires and gas sensors thereof by using high radio frequency power, the specific steps comprising:

[0032] (1) The silicon substrate is placed in a mixed solution of concentrated sulfuric acid and hydrogen peroxide (H 2 SO 4 :H 2 o 2 =3:1) for 0.5 hours, then rinsed with deionized water, and finally dried with nitrogen;

[0033] (2) Place the processed silicon substrate on the tray of the sputtering chamber, heat it to 500°C, keep it warm for 30 minutes, and pass a mixed gas of argon and oxygen (Ar 2 :O 2 =25sccm:0.2sccm), the sputtering chamber pressure was set to...

Embodiment 2

[0036] Embodiment 2: Gas sensor preparation method

[0037] A remarkable feature of the present invention is that it can realize the preparation of ITO nanowires on ceramic tubes in one step, and the specific implementation steps are as follows:

[0038] (1) Place the ceramic tube in the alcohol solution for 0.5 hours and then dry it with nitrogen;

[0039] (2) Place the ceramic tube on the sputtering chamber tray, adjust the magnetron sputtering process parameters: the radio frequency power is 250W, the mixed gas ratio of argon and oxygen is Ar2:O2=25sccm:0.2sccm, and the sputtering chamber pressure is set is 1Pa, and the temperature is 500°C;

[0040] (3) After the chamber temperature reaches 500°C, the holding time is 30 minutes;

[0041] (4) The sputtering time is 0.5 hours, then naturally cooled to room temperature;

[0042] (5) Take out the ceramic tube, and rapidly anneal at 470°C for 5 minutes in an air atmosphere;

[0043] (6) The lead wires are connected to the c...

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Abstract

The invention discloses a method for preparing an indium tin oxid (ITO) nanowire and an ITO nanowire gas sensor through high radio-frequency power. The method includes the steps that a substrate or aceramic tube is pre-treated and then put in a magnetron sputtering cavity, the air pressure and temperature of a sputtering chamber are adjusted, mixed gas of argon and oxygen is fed, through a magnetron sputtering mode, an ITO target is bombarded under the condition of high frequency for magnetron sputtering, one-time growth is performed, and a layer of ITO nanowire is prepared on the surface ofthe substrate or the ceramic tube through a selfcatalysis principle. Through the same method, the ITO nanowire can be directly deposited on the ceramic tube through one step so as to prepare the gas sensor, electrode leads are disposed at the two ends of the ceramic tube, heating wires are disposed inside the ceramic tube, and then the sensor can be directly heated. The method has the advantages that the nanowire growing speed is high, the preparation process is simple and low in cost, the gas sensor can be prepared through one step, the preparation technology and flow are greatly shortened, the materials are good in gas sensing property, and the prepared sensor has good sensitivity to alcohol.

Description

technical field [0001] The invention belongs to the field of gas sensitive sensors, in particular to a method for preparing ITO nanowires and gas sensors thereof by sputtering with high radio frequency power. Background technique [0002] Indium tin oxide (ITO), as a new type of sensor material, has excellent electrical properties and stable physical and chemical properties. The oxygen element on it is very sensitive to the interaction with gas, which can significantly improve the sensitivity of the sensor. At present, one-dimensional nanostructures have a large specific surface area, which is more conducive to the adsorption and diffusion of gases, making one-dimensional nanomaterials have potential advantages in gas sensors, which are characterized by fast response speed, high sensitivity, good selectivity, and device Stable performance. [0003] At this stage, reports on ITO nanomaterials mainly focus on ITO nanowires, and the growth mechanism follows the vapor-liquid-so...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08G01N27/12B82Y40/00
CPCB82Y40/00C23C14/086C23C14/35G01N27/127
Inventor 李强张袁涛云峰
Owner XI AN JIAOTONG UNIV
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