OLED display device and preparation method thereof

Abstract

The invention provides an OLED display device and a preparation method thereof. The method comprises a step of preparing a TFT layer on a glass substrate, a step of preparing an OLED device layer on the TFT layer, a step of preparing a barrier layer and a buffer layer on the glass substrate, wherein the barrier layer covers the OLED device layer, a step of preparing a plurality of grooves on the barrier layer and preparing water absorbing material layers in the grooves. According to the OLED display device and the preparation method, the permeability of water and oxygen is reduced, the risk ofthe breakage of the barrier layer and the buffer layer is reduced, and the service life of the OLED display device is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an OLED display device and a preparation method thereof. Background technique [0002] In the current field of lighting and display, due to the characteristics of OLED (Organic Light-Emitting Diode, Organic Light-Emitting Diode), such as low start-up voltage, light and thin, and self-illumination, more and more researches are widely used to develop lighting products. As well as in the panel industry to meet the needs of low energy consumption, thinness and surface light source. At present, OLED flexible display panels are flexible, thin, and self-illuminating, leading to the birth of more and more OLED flexible display products. [0003] However, the structure of the current OLED display device adopts such as figure 1 The shown thin film encapsulation method is carried out, 1', 2', 3', 4', 5', 6', 7', 8' respectively represent the glass substrate, TFT (Thin Film Transistor, th...

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Problems solved by technology

[0003] However, the structure of the current OLED display device adopts such as figure 1 The shown thin film encapsulation method is carried out, 1', 2', 3', 4', 5', 6', 7', 8' respectively represent the glass substrate, TFT (Thin Film Transistor, thin film transistor) layer, pixel layer , the first barrier layer, the first buffer layer, the second barrier layer, the second buffer layer, and the third barrier layer, but due to the thin film packaging barrier layer and buffer layer and other film layers are thin, and there is stress between the film layers, so , the ability of the barrier layer and the buffer layer to block water and oxygen has not achieved the desired effect, the water-oxygen permeability is high, and the film layer of the barrier layer and the buffer layer is more prone to breakage, resulting in package failure

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