Power device with surface charge region structure

Abstract

The invention provides a power device with a surface charge region structure, and the power device comprises a P substrate I (1), a floating equipotential layer (4), a P substrate II (2) and a drift region (5), wherein the P substrate I (1), the floating equipotential layer (4), the P substrate II (2) and the drift region (5) are arranged in order from the bottom to the top. The drift region (5) is provided with an N+ drain region, a drain electrode (10), a gate electrode (12), a source electrode (11), an N+ contact region, a P well (7), and a P+ source region. A series of laterally and equidistantly distributed N+ charge regions (6) are disposed at the top of the drift region (5) and within the drift region to form the surface charge region. Because the surface of the drift region is provided with a surface charge region structure of a series of equidistantly distributed N+ charge regions, the surface charge region generates interface charges, and the electric field in the charge region is improved, and the lateral withstand voltage of the device is improved. The interface charge improves the longitudinal electric field and longitudinal withstand voltage of a buried layer at the same time, reduces the electric field nearby the drain electrode and prevents the surface of the device from being broken down too early. Because the power device employs the surface charge region structure of equidistantly distributed N+ charge regions, the power device is simple and feasible in technology, is better in technological tolerance, and is compatible with the conventional CMOS technology.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a power device with a surface charge region structure. Background technique [0002] Power semiconductor device is a semiconductor device for power processing, and it is the main object of power electronics research. Power electronics was born under the impetus of the development of power semiconductor devices, and has gradually matured after decades of development. Power semiconductor devices have a wide range of applications such as weaponry, power electronics, aerospace, flat panel display drivers and other high-tech industries. However, lateral power devices have lateral channels, and the drain, source, and gate are all on the chip surface, which is easy to integrate with low-voltage signals through internal connections, and is widely used in power integrated circuits. Therefore, domestic and foreign experts and scholars have invested great attention and...

AI Technical Summary

Problems solved by technology

The traditional means of improving the withstand voltage are often complicated in process and high in cost and price. The surface charge region structure is adopted, the process is simple and feasible, the process tolerance is good, and it is compatible with the conventional CMOS process

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