A Single Event Fault Injection Simulation Method Based on Double-Double Exponential Current Source

Abstract

The invention relates to a single-particle fault injection simulating method based on a double-double exponential current source. The single-particle fault injection simulating method comprises the steps that 1, a single tube radiation model is established, and parameters are extracted; 2, device and circuit mixed simulation is conducted on a CMOS process phase inverter circuit execution device, and single-particle transient pulse current is obtained according to a selected incident ion LET value; 3, in the step of inserting the double-double exponential current source in the following form into a target circuit fault injection mode, the actual load situation of a circuit is considered, the simulation precision is increased by increasing one double exponential current source, the accuracyof total charge quantity is improved on the premise that correct injected pulse waveform is ensured, and the technical problems are solved that parameter extraction is complicated, the total quantityof injected charge is overstated and much time is consumed during transient current injection in a traditional fault injection method.

Description

technical field [0001] The invention belongs to the field of single event effect simulation and emulation of CMOS integrated circuits, and relates to a single event fault injection simulation method based on double-double exponential current sources. Background technique [0002] Semiconductor devices work in the space radiation environment for a long time. A single high-energy particle hits the sensitive area of ​​the device to generate a large number of ionized electron-hole pairs. The instantaneous carrier collection will cause abnormal node voltage of the device, which will lead to temporary or permanent damage to the circuit. This radiation ionization damage is called single event effect. [0003] For the simulation of single event effects, device-level simulation can accurately simulate the basic physical process of single event damage, accurately quantify the transient response of charge collection and node voltage, but limited by computing power, it can only focus on...

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Problems solved by technology

[0006] In order to accurately estimate the total amount of charge injected by a single event fault, and solve the technical problems of complex parameter extraction, overestimation of the total amount of injected charge, and very time-consuming technical problems of the traditional fault injection method during transient current injection, based on the traditional double-exponential current source injection method Improvement, the present invention provides a single event fault injection simulation method based on a double-double exponential current source for digital integrated circuits, which is used to more reasonably and accurately study the single event effect of the circuit and predict its anti-radiation ability

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