A three-dimensional electrode structure of a diamond ultraviolet detector and its manufacturing method

Abstract

The invention discloses a diamond ultraviolet detector three-dimensional electrode structure, which comprises a monocrystal diamond substrate and an intrinsic monocrystal diamond epitaxial layer, which are laminated. The surface of the diamond epitaxial layer is provided with a plurality of parallel diamond bars in an outward protruding manner. The surface of the diamond epitaxial layer is also provided with two metal electrodes pad, which serve as a positive electrode and a negative electrode respectively. Even numbers of interdigital electrodes pass through the diamond bars vertically at equidistant intervals. The interdigital electrodes 5 are numbered as 1,2,3,..., n according to the arrangement sequence of the interdigital electrodes, wherein the interdigital electrodes, the number ofwhich is odd, are connected to the same metal electrode pad 4, and the interdigital electrodes, the number of which is even, are connected to the other metal electrode pad 4. The diamond ultraviolet detector three-dimensional electrode structure solves the problems of difficult separation of a substrate and a film, long collection time of current carriers and low collection efficiency of a vertical sandwich electrode structure, and meanwhile, solves the problem of poor electric field uniformity when a coplane interdigital electrode structure is adopted, thereby improving response and time response performance of the detector.

Description

【Technical field】 [0001] The invention belongs to the technical field of photoelectric detection, and relates to a three-dimensional electrode structure of a diamond ultraviolet detector and a manufacturing method thereof. 【Background technique】 [0002] Ultraviolet photoelectric detection technology is a very important technology, which can be widely used in space flame detection, smoke alarm, space communication and other fields. Due to the complex and harsh working environment, the material requirements for the detector are very high. As a wide-bandgap semiconductor, diamond has a cut-off wavelength of 225 nanometers and has natural visible light filtering properties, so it is very suitable for the preparation of solar-blind ultraviolet detectors. At the same time, diamond has many excellent properties, such as high thermal conductivity, good thermal and chemical stability, and good radiation resistance. All of these make diamond have great advantages in the field of ul...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method to solve the problems of difficult separation of the substrate and film, long carrier collection time and low collection efficiency when using a vertical sandwich electrode structure, and at the same time, solve the problem of uniform electric field when using a coplanar interdigitated electrode structure. The problem of poor performance, thereby improving the responsivity and time response performance of the detector

Images