Wafer processing method

Abstract

The invention provides a wafer processing method. The wafer processing method comprises the steps of enabling a to-be-processed wafer to be placed on a chuck, and completing dry etching on the to-be-processed wafer; pumping helium to the back surface of the to-be-processed wafer, and pumping argon to the front surface of the to-be-processed wafer; enabling the to-be-processed wafer to be ejected by an ejector pin; and performing a wet etching process. According to the wafer processing method, after dry etching is completed on the to-be-processed wafer, helium is pumped to the back surface of the to-be-processed wafer; when the wafer is cooled, a carrier for transferring electrostatic charges removes electrostatic charges from the to-be-processed wafer; then the front surface of the to-be-processed wafer is pumped with argon to take away the electrostatic charges from the surface of the wafer; and next, the to-be-processed wafer is ejected by the ejector pin, so that dynamic alignment offset can be relieved, risk of wafer fragmenting caused by overhigh dynamic alignment offset can be prevented, and spherical defects formed in the wet etching can be avoided effectively, thereby improving product yield.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer processing method. Background technique [0002] Semiconductor manufacturing technology requires a variety of different physical and chemical processes on the wafer to form the device structure. The wafer is passed on the chuck, and the etching process is one of the most important processes. The etching process also includes dry etching and wet etching. The mainstream dry etching usually uses etching process conditions such as high power and high plasma density to form a high etching rate, thereby obtaining high wafer output. , After the dry etching process is completed, the etching chamber and the surface of the wafer usually have more charges. In addition, if the etching is a film layer with insulating properties, it will cause difficulty or insufficient release of residual charges. [0003] When wet etching is performed after dry etching, the char...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a wafer processing method to solve the problem of wafer defects in the process

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