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Single layer polymer memory based on MEH-PPV: PCBM donor-acceptor structure

A technology of MEH-PPV and polymer, which is applied in the field of single-layer polymer memory and its preparation, can solve the problems of difficulty in preparing large-area devices, unfavorable environmental impact, and high manufacturing cost, and achieve simple process, low cost, and simple structure Effect

Inactive Publication Date: 2018-08-31
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, small molecule materials need to use a thermal evaporation process with high manufacturing costs, so there is a lot of material waste, and it is difficult to prepare large-area devices; in addition, a toxic atmosphere is often generated during the film growth process, which has a negative impact on the environment.

Method used

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  • Single layer polymer memory based on MEH-PPV: PCBM donor-acceptor structure
  • Single layer polymer memory based on MEH-PPV: PCBM donor-acceptor structure
  • Single layer polymer memory based on MEH-PPV: PCBM donor-acceptor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The blending ratio of MEH-PPV(M) and PCBM(P) is selected as M:P=1:1 (weight ratio), and the device structure used is ITO / PEDOT:PSS / M:P / Au.

[0043] First, the ITO on the ITO glass is photolithographically formed into electrodes with a width of 4 mm and a length of 30 mm, then cleaned and dried with nitrogen, and treated with ultraviolet ozone plasma for 4-10 minutes. Next, spin-coat PEDOT:PSS polymer aqueous solution on the cleaned ITO electrode, and place it in a vacuum drying oven with a constant temperature of 50-150° C. for 0.5-3 hours to vacuum dry. Spin-coat the mixed solution of MEH-PPV:PCBM on the PEDOT:PSS with good film formation, and bake in a vacuum drying oven with a constant temperature of 50-200°C for 10-60 minutes. Finally, the sample is transferred to the coating equipment, in a vacuum of (1 ~ 5) × 10 -4 Under the condition of Pa, the gold on the top electrode intersecting with the bottom electrode ITO is vapor-deposited. Among them, the thickness of ...

Embodiment 2

[0046] The blending ratio of MEH-PPV(M) and PCBM(P) is selected as M:P=2:1 (weight ratio), and the device structure used is ITO / PEDOT:PSS / M:P / Au.

[0047] First, the ITO on the ITO glass is photolithographically formed into electrodes with a width of 4 mm and a length of 30 mm, then cleaned and dried with nitrogen, and treated with ultraviolet ozone plasma for 4-10 minutes. Next, spin-coat PEDOT:PSS polymer aqueous solution on the cleaned ITO electrode, and place it in a vacuum drying oven with a constant temperature of 50-150° C. for 0.5-3 hours to vacuum dry. Spin-coat the mixed solution of MEH-PPV:PCBM on the PEDOT:PSS with good film formation, and bake in a vacuum drying oven with a constant temperature of 50-200°C for 10-60 minutes. Finally, the sample is transferred to the coating equipment, in a vacuum of (1 ~ 5) × 10 -4 Under the condition of Pa, the gold on the top electrode intersecting with the bottom electrode ITO is vapor-deposited. Among them, the thickness of ...

Embodiment 3

[0050] The blending ratio of MEH-PPV(M) and PCBM(P) is selected as M:P=3:1 (weight ratio), and the device structure used is ITO / PEDOT:PSS / M:P / Au.

[0051] First, the ITO on the ITO glass is photolithographically formed into electrodes with a width of 4 mm and a length of 30 mm, then cleaned and dried with nitrogen, and treated with ultraviolet ozone plasma for 4-10 minutes. Next, spin-coat PEDOT:PSS polymer aqueous solution on the cleaned ITO electrode, and place it in a vacuum drying oven with a constant temperature of 50-150° C. for 0.5-3 hours to vacuum dry. Spin-coat the mixed solution of MEH-PPV:PCBM on the PEDOT:PSS with good film formation, and bake in a vacuum drying oven with a constant temperature of 50-200°C for 10-60 minutes. Finally, the sample is transferred to the coating equipment, in a vacuum of (1 ~ 5) × 10 -4 Under the condition of Pa, the gold on the top electrode intersecting with the bottom electrode ITO is vapor-deposited. Among them, the thickness of ...

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Abstract

The invention relates to a single layer polymer memory based on a MEH-PPV: PCBM donor-acceptor structure and a preparation method thereof; the memory comprises a glass or flexible substrate, an ITO bottom electrode, a PEDOT: PSS cavity injection layer, a MEH-PPV: PCBM photoelectric active function layer and a gold top electrode, wherein each layer is obtained via spin coating or vapor plating. Thepreparation technology is simple and low in production cost; the obtained memory is small in size, excellent in electricity storage performance, good in stability and high in repeatability.

Description

technical field [0001] The invention relates to the technical field of electrical storage materials, in particular to a single-layer polymer memory based on a MEH-PPV:PCBM donor-acceptor structure and a preparation method thereof. Background technique [0002] Memory is a very important electronic device in the field of semiconductor electronics, and it is also the core component of modern information technology. It has broad application prospects in the fields of information and electronics industries. At present, the rapid development of information technology puts forward higher requirements for memory, not only to have small size, ultra-high capacity and fast read and write capabilities, but also to have the characteristics of low power consumption, low cost, simple preparation and high reliability. Although the widely used silicon-based electrical memory based on traditional semiconductors has the characteristics of fast storage and long information retention time, expe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
CPCH10K71/12H10K85/111H10K10/50
Inventor 石胜伟李文婷
Owner WUHAN INSTITUTE OF TECHNOLOGY
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