A kind of arylated graphene film and its preparation method, a kind of arylated graphene barrier film and its preparation method

A technology of barrier film and graphene, which is applied in the direction of graphene, chemical instruments and methods, carbon compounds, etc., can solve the problems of poor hydrophobicity of water and oxygen barrier film, poor hydrophobicity and UV resistance of barrier film, and avoid compatibility Poor, good UV resistance, effect of improving barrier ability

Active Publication Date: 2020-02-28
NINGBO EXCITON TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] In order to solve the problem of poor hydrophobicity of existing water-oxygen barrier films, the present invention provides an arylated graphene film and a preparation method thereof, an arylated graphene barrier film and a preparation method thereof
The present invention solves the problem of poor hydrophobicity and UV resistance of existing barrier films by introducing a hydrophobic aromatic compound with UV absorption capacity

Method used

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  • A kind of arylated graphene film and its preparation method, a kind of arylated graphene barrier film and its preparation method
  • A kind of arylated graphene film and its preparation method, a kind of arylated graphene barrier film and its preparation method
  • A kind of arylated graphene film and its preparation method, a kind of arylated graphene barrier film and its preparation method

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preparation example Construction

[0052] The preparation method of the arylated graphene film provided by the invention comprises the following steps:

[0053] (1) grow a graphene film on a metal substrate by vapor deposition;

[0054] (2) Place the graphene film obtained in step (1) and the halogenated aromatic hydrocarbon compound in ammonia water to heat and react. After the reaction is completed, wash, centrifuge, suction filter and vacuum dry to obtain the arylated graphene film.

[0055] Further, the heating reaction temperature in step (2) is 60-120°C, the heating time is 12-72 hours, and the vacuum drying temperature is 60-100°C.

[0056] The preparation method of the arylated graphene barrier film provided by the invention comprises the following steps:

[0057] (1) Lay the arylated graphene film with copper foil and the transfer substrate with thermal release adhesive together by rolling, and then soak the above composite material in a mixture of hydrochloric acid / hydrogen peroxide Solvent in the w...

Embodiment 1

[0068] The invention provides an arylated graphene film, the film includes graphene, and the surface of the graphene is grafted with an aromatic compound. The present invention also provides an arylated graphene barrier film, which sequentially includes an arylated graphene film, a barrier glue and a substrate layer.

[0069] 1. Preparation of arylated graphene films

[0070] Using a conventional vapor deposition method, a graphene film is grown on 100g copper foil, and then the graphene / copper foil (graphene content is 10g) is placed in an ammonia tank and 10g 1-brominated benzene is added, and the reaction is heated at 100°C After 24 hours, filter, wash with deionized water, acetone, chloroform, and ethanol respectively, centrifuge, suction filter, and vacuum-dry at 100°C to obtain 19.8 g of arylated graphene with copper foil, with a yield of 99%. Wherein the thickness of the metal substrate is 15 microns.

[0071] 2. Preparation of arylated graphene barrier film

[0072]...

Embodiment 2

[0074] The arylated graphene film and the arylated graphene barrier film provided in Example 1.

[0075] 1. Preparation of arylated graphene films

[0076] Using a conventional vapor deposition method, a graphene film is grown on 100g of copper foil, then the graphene / copper foil (graphene content is 10g) is placed in an ammonia tank and 5g of 1-brominated benzene is added, and the reaction is heated at 100°C After 24 hours, filter, wash with deionized water, acetone, chloroform, and ethanol respectively, centrifuge, suction filter, and vacuum-dry at 100°C to obtain 13.5 g of arylated graphene with copper foil, with a yield of 90%. Wherein the thickness of the metal substrate is 15 microns.

[0077] 2. Preparation of arylated graphene barrier film

[0078] The arylated graphene film with copper foil and the transfer substrate with thermal release adhesive are laminated together flatly by rolling, and then the above composite material is soaked in a water tank containing a mi...

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Abstract

The invention relates to the field of thin films, in particular to an arylation graphene thin film, a method for preparing the same, an arylation graphene barrier film and a method for preparing the same. By the aid of the arylation graphene thin film, the methods and the arylation graphene barrier film, the problem of poor hydrophobic properties of existing water and oxygen barrier films can be solved. The arylation graphene thin film comprises graphene. Aromatic compounds are grafted on the surfaces of the graphene. The arylation graphene barrier film comprises the arylation graphene thin film. The arylation graphene thin film, the methods and the arylation graphene barrier film have the advantages that the arylation graphene barrier film is excellent in hydrophobic property, and the water vapor barrier capacity can be improved; the arylation graphene barrier film is excellent in anti-ultraviolet capability; the problems of poor hydrophobic properties and anti-ultraviolet capabilityof existing barrier films can be solved by the aid of the introduced hydrophobic aromatic compounds with ultraviolet absorption capacity.

Description

technical field [0001] The invention relates to the field of films, in particular, the invention relates to an arylated graphene film and a preparation method thereof, an arylated graphene barrier film and a preparation method thereof. Background technique [0002] Quantum dots are three-dimensional clusters with nanoscale size, so they are also called nanodots or nanocrystals. With the rapid development of semiconductor quantum dot synthesis, its advantages such as low cost, high stability, high quantum yield and large-scale production make it considered a solid foundation for further research on many frontier applications. In particular, quantum dots exhibit unique luminescent properties because their diameter is close to the exciton Bohr radius, making them have good application prospects in luminescent materials, displays, and the like. However, due to the poor water vapor and oxygen resistance of quantum dots, it is easily oxidized by oxygen and water vapor in the air,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186C01B32/194
CPCC01B32/186C01B32/194C01B2204/20C01P2002/82C01P2002/84C01P2004/03
Inventor 李刚徐雍捷李培源徐良霞陈冲孙书政刘伟唐海江张彦
Owner NINGBO EXCITON TECH
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