OLED device and preparation method thereof

Abstract

The invention relates to a QLED device and a preparation method thereof. The QLED device comprises a substrate, an anode, a hole injection layer, an inorganic semiconductor layer, a quantum dot light-emitting layer, an electron injection layer and a cathode which are sequentially arranged in a laminated manner, wherein the hole injection layer is made of metal oxide nanoparticles. The QLED deviceadopts the metal oxide nano to serve as the hole injection layer and introduces an inorganic semiconductor film with the same composition as a quantum dot shell layer between the quantum dot light-emitting layer and the hole transport layer at the same time, thereby ensuring good hole injection performance between the inorganic semiconductor layer and the quantum dot light-emitting layer, and thuseffectively improving the injection transport from the hole injection layer to the inorganic semiconductor film. The stability of the device can be effectively improved by adopting an all-inorganic material to prepare a quantum dot light-emitting diode.

Description

technical field [0001] The invention relates to the field of QLED technology, in particular to a QLED device and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have excellent characteristics such as high light color purity, high luminous quantum efficiency, adjustable luminous color, and long service life. These characteristics make quantum dot light-emitting diodes (QLED) with quantum dot materials as the light-emitting layer have broad application prospects in solid-state lighting, flat panel display and other fields, and have attracted extensive attention from academia and industry. [0003] In recent years, through the improvement of quantum dot material synthesis process and the optimization of device structure, the performance of QLED has been greatly improved. However, due to the deep energy level and high ionization potential of quantum dot materials, the existing hole transport layer and There is a large hole injection barrie...

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Problems solved by technology

[0003] In recent years, through the improvement of quantum dot material synthesis process and the optimization of device structure, the performance of QLED has been greatly improved. However, due to the deep energy level and large ionization potential of quantum dot materials, the existing hole transport layer and There is a large hole injection barrier at the interface between the quantum dot light-emitting layers, which makes the hole injection more difficult, while the relative electron injection is easier, which causes the carrier imbalance in the QLED light-emitting layer, which seriously limits the quality of the QLED. Device performance

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