Semiconductor laser material passivation method

Abstract

The invention discloses a semiconductor laser material passivation method. The method is applicable to passivation treatment of a cavity surface material of a semiconductor laser resonant cavity; themethod specifically comprises the steps of performing bombardment cleaning on the cavity surface material of the semiconductor laser resonant cavity by adopting ion beams, and depositing an AlN passivation layer on the cavity surface of the semiconductor laser resonant cavity by adopting an ALD technology. According to the semiconductor laser material passivation method disclosed in the invention,the surface of the resonant cavity is bombarded by the ion beams in a vacuum environment to effectively remove an oxide layer form the cavity surface, cavity surface pollutants, surface state, surface material dislocation and surface material dangling bond to obtain a clean semiconductor laser resonant cavity surface, and then low-temperature deposition in an ALD apparatus is realized in a plasmaauxiliary condition to obtain the AlN passivation layer for protecting the cavity surface of the resonant cavity. By virtue of the method disclosed in the invention, by performing process treatment on the resonant cavity surface, the cavity surface damage threshold value of the semiconductor laser is improved, and improvement of the output power, the service life and performance stability of thedevice is realized.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a semiconductor laser preparation process, in particular to a semiconductor laser resonator cavity surface material surface passivation process, the process combines ion bombardment and atomic layer deposition in the semiconductor laser resonator surface material passivation process The technology is carried out in a vacuum environment, which effectively reduces the surface state density and non-radiative recombination center of the semiconductor laser resonator cavity surface material, and improves the luminous efficiency, laser output power and laser device life of the semiconductor laser device. Background technique [0002] Semiconductor lasers have the advantages of small size, light weight, long life, low cost, and easy mass production. They are widely used in the entire field of optoelectronics and have become the core devices in the field of optoelectronic science today...

AI Technical Summary

Problems solved by technology

[0004] In the existing manufacturing process of semiconductor laser devices, there are usually problems of oxidation, surface residue and surface contamination on the cleavage surface of the Bar bar. The main reason for this problem is the vacuum environment in which the epitaxial wafer is cleaved. Poor, resulting in low damage threshold of the cavity surface of the semiconductor laser, and the cavity surface damage threshold of the semiconductor laser is an important factor affecting the output power and life of the semiconductor laser. Therefore, effective processing of the cavity surface of the semiconductor laser resonator can Effectively increase the laser output power of semiconductor lasers, improve the life of semiconductor lasers and the stability of device performance

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