Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Impedance matching Joseph Sen parametric amplifier, manufacturing method thereof and a communication module

A parametric amplifier and impedance matching technology, applied in the field of communication modules, impedance matching Josephson parametric amplifiers and their preparation, can solve the problems of large signal attenuation, large device size, etc., to ensure reliability, simplify the preparation process, and the device preparation process. complex effects

Pending Publication Date: 2018-07-06
HEFEI ORIGIN QUANTUM COMP TECH CO LTD
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems of large signal attenuation and large device size in the impedance matching Josephson parametric amplifier in the prior art, the present invention provides an impedance matching Josephson parametric amplifier and its preparation method and communication module

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Impedance matching Joseph Sen parametric amplifier, manufacturing method thereof and a communication module
  • Impedance matching Joseph Sen parametric amplifier, manufacturing method thereof and a communication module
  • Impedance matching Joseph Sen parametric amplifier, manufacturing method thereof and a communication module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] like figure 1 , figure 2 , image 3 As shown, an impedance matching Josephson parametric amplifier includes an impedance converter 1, an anharmonic resonant cavity 2 and a pumping microwave circuit 3, the first end of the impedance converter 1 is connected to the first signal input port 14, The second end of the impedance converter 1 is connected in series with the anharmonic resonant cavity 2, the first signal input port 14 is a microwave input port of a signal to be amplified, and the anharmonic resonant cavity 2 is connected to the The pumping microwave circuit 3 is a mutual inductance connection.

[0081]An impedance matching Josephson parametric amplifier, which includes an impedance converter 1, an anharmonic resonant cavity 2 and a pumping microwave circuit 3, the impedance converter 1 of the amplifier, the anharmonic resonant cavity 2 and the pumping microwave circuit 3 are all integrated in On the silicon substrate, the impedance converter 1 and the non-har...

Embodiment 2

[0101] The preparation method of the impedance matching Josephson parametric amplifier is as follows:

[0102] (1) The first coating, photolithography

[0103] a. Firstly, an aluminum film with a thickness of 30nm is plated on the cleaned substrate, and the aluminum film is coated by high-vacuum electron beam evaporation, and the coating rate is 0.1nm / s;

[0104] b. Use the ultraviolet lithography method to prepare the required graphics, the impedance converter 1, the first signal input port 14, the magnetic flux bias line 31, the second signal input port 32, the lower pole plate of the capacitor 22, and the ground plane are here Define in engraving, when the length L=9.07mm of signal microwave wavelength to be amplified, define the impedance of the first coplanar waveguide 11 as 50Ω, the impedance of the second coplanar waveguide 12 is 40Ω, the length of the second coplanar waveguide 12 is 0.25L, the impedance of the third coplanar waveguide 13 is 58Ω, the length of the thir...

Embodiment 3

[0126] The preparation method of the impedance matching Josephson parametric amplifier is as follows:

[0127] (1) The first coating, photolithography

[0128] a. First, plate an aluminum film with a thickness of 60nm on the cleaned substrate. The aluminum film is coated by high-vacuum electron beam evaporation, and the coating rate is 1nm / s;

[0129] b. Use the ultraviolet lithography method to prepare the required graphics, the impedance converter 1, the first signal input port 14, the magnetic flux bias line 31, the second signal input port 32, the lower pole plate of the capacitor 22, and the ground plane are here Define in engraving, when the length L=8.55mm of signal microwave wavelength to be amplified, define the impedance of the first coplanar waveguide 11 as 50Ω, the impedance of the second coplanar waveguide 12 is 40Ω, the length of the second coplanar waveguide 12 is 0.25L, the impedance of the third coplanar waveguide 13 is 58Ω, the length of the third coplanar w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an impedance matching Joseph Sen parametric amplifier, a manufacturing method thereof and a communication module, belongs to the field of Joseph Sen parametric amplifiers, andaims to solve the problem that the impedance matching Joseph Sen parametric amplifier has larger signal attenuation and larger device size in the prior art. An impedance transformer, an anharmonic resonant cavity and a pump microwave circuit of the impedance matching Joseph Sen parametric amplifier are all integrated on a silicon substrate; and a second end of the impedance transformer is connected in series with the anharmonic resonant cavity through a superconducting material. Meanwhile, all components other than a supercapacitor insulating layer are made of the superconducting material, sothat the reflection and loss of signal microwaves of the manufactured amplifier are greatly reduced, and the attenuation constant is almost zero. The bandwidth of the amplifier can reach 1GHz or more,and the amplifier can work in a frequency range of 5GHz to 8GHz. Meanwhile, a preparation process is simplified, and the repeatability and yield of device manufacturing are improved.

Description

technical field [0001] The invention relates to the field of Josephson parametric amplifiers, in particular to an impedance-matched Josephson parametric amplifier, a preparation method thereof, and a communication module. Background technique [0002] The current mainstream Josephson parametric amplifiers mainly include traveling wave amplifiers, traditional narrowband Josephson parametric amplifiers and impedance matching Josephson parametric amplifiers. Among them, the traveling wave amplifier has the advantages of wide bandwidth and high saturation power, but its structure is complex, and the preparation process requires very good micro-nano processing technology and low-loss insulating materials, which are difficult to process in general laboratories (A near–quantum-limited Josephson traveling -wave parametric amplifier, C.Macklin et.al., Science 350 6258(2015); Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching, T.C.White...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03F7/04
CPCH03F7/04
Inventor 杨夏朱美珍
Owner HEFEI ORIGIN QUANTUM COMP TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com