Semiconductor structure, forming method thereof and SRAM

Abstract

The invention provides a semiconductor structure, a forming method thereof and an SRAM. The method comprises a step of providing a base which comprises substrate and discrete fins on the substrate, wherein the substrate includes a pass gate transistor region, a step of forming gate structures which go across the fins and cover a part of top surfaces and side wall surfaces of the fins, and a step of forming pass gate doping areas in the fins at two sides of the gate structures of the pass gate transistor region, wherein a pass gate doping area of at least one side is formed by a non-epitaxial layer mode that performs ion doping on the fins. The pass gate doping area of at least one side is formed by the non-epitaxial layer mode that performs ion doping on the fins, compared with a scheme offorming pass gate doping areas by an epitaxial layer mode at two sides, the contact resistance between a subsequent metal silicide and the pass gate doping areas is increased, thus the on-state current of a formed pass gate transistor is decreased, the SRAM beta ratio is inversely proportional to the on-state current of the pass gate transistor, and thus the read margin of an SRAM is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure, a forming method thereof, and an SRAM. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: logic, memory and analog circuits, among which memory devices account for a considerable proportion of integrated circuit products. With the development of semiconductor technology, storage devices are more widely used, and the storage device and other device regions need to be formed on a chip at the same time to form an embedded semiconductor storage device. For example, to embed the storage device in the central processing unit, it is necessary to make the storage device compatible with the embedded central processing unit platform, and maintain the specifications and corresponding electrical performance of the original storage device. [0003] Generally, the memory device needs ...

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Problems solved by technology

[0004] However, the performance of the static random access memory in the semiconductor device formed by the prior art needs to be further improved, so that the overall performance of the semiconductor device is relatively poor

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