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IGBT heat sensitive electric parameter extraction device

A technology sensitive to electrical parameters and heat, applied in measuring devices, measuring electricity, measuring electrical variables, etc., can solve problems such as increased on-state resistance, packaging defects, and slow response speed

Active Publication Date: 2018-06-01
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing technologies, such as infrared thermal imaging and thermocouples can solve the problem of junction temperature measurement, but there are disadvantages such as slow response speed and the need to modify the IGBT structure
[0003] The size of the output power will lead to different junction temperatures, and the aging of the IGBT will also affect the junction temperature
With the power cycle of the IGBT, on the one hand, the IGBT is frequently disconnected, and the junction temperature fluctuates between high and low levels. Stress is generated between the IGBT layers due to the difference in thermal expansion coefficient, which eventually causes defects in the package, and the heat dissipation capacity of the IGBT package is reduced. The time the junction temperature increases
On the other hand, the working state of high voltage and high current is likely to cause aging inside the chip, leading to performance degradation, increased on-state resistance and increased switching loss, which further leads to increased power loss, increased chip junction temperature, and positive feedback. Eventually lead to chip failure

Method used

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  • IGBT heat sensitive electric parameter extraction device
  • IGBT heat sensitive electric parameter extraction device
  • IGBT heat sensitive electric parameter extraction device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] See figure 1 , figure 2 , image 3 with Figure 4 , A device for extracting thermally sensitive electrical parameters of IGBT, mainly includes a power cycle system 1, a thermally sensitive electrical parameter extraction system 2, a test station 3, a temperature control system 4, and a measurement and control protection system 5.

[0050] The circuit structure of the power cycle system 1 is: a power cycle power supply control switch S 1 A 1 Terminal series power circulating current source Is.

[0051] The power circulation system 1 and the thermosensitive electric parameter extraction system 2 form a series loop.

[0052] Further, the power cycle system 1 and the thermosensitive electric parameter extraction system 2 work independently.

[0053] The thermosensitive electric parameter extraction system 2 mainly includes a static thermosensitive electric parameter extraction subsystem 201 and a dynamic thermosensitive electric parameter extraction subsystem 202.

[0054] Further,...

Embodiment 2

[0082] See Figure 5 , The steps for extracting IGBT static thermal sensitive electrical parameters are as follows:

[0083] 1) Follow Figure 1 to Figure 4 As described, the IGBT thermal sensitive electrical parameter extraction device is connected.

[0084] 2) Let the test current source control switch S 2 Closed, the power cycle power control switch S 1 , The energy storage system control switch S 3 And the energy storage power control switch S 4 Both remain disconnected.

[0085] 3) The signal source 504 outputs a trigger signal to the device under test 301.

[0086] 4) Collect the analog waveform signals of the voltage and current of the device under test 301 through the data acquisition card 501.

[0087] 5) Use the A / D conversion module 502 to convert the analog waveform signal into a digital waveform signal.

[0088] 6) The processor 503 receives and processes the digital waveform signal. The processor 503 controls the switch S to the power cycle 1 , The test current source con...

Embodiment 3

[0090] See Image 6 , The steps for extracting IGBT dynamic thermal sensitive electrical parameters are as follows:

[0091] 1) Follow Figure 1 to Figure 4 As described, the IGBT thermal sensitive electrical parameter extraction device is connected.

[0092] 2) Make the energy storage system control switch S 3 And the energy storage power control switch S 4 Closed, the power cycle power control switch S 1 And the test current source control switch S 2 Hold disconnect.

[0093] 3) The signal source 504 outputs a trigger signal to the device under test 301.

[0094] 4) Control the switching of the power device transistor on the test station 5 through the gate control signal of the measurement and control protection system 5.

[0095] 5) The data acquisition card 501 acquires the transient analog waveform signal of the switching process of the transistor.

[0096] 6) Utilize the A / D conversion module 502 to convert the analog waveform signal into a digital waveform signal.

[0097] 7) The ...

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PUM

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Abstract

The invention discloses an IGBT heat sensitive electric parameter extraction device, which mainly comprises a power cycling system, a heat sensitive electric parameter extraction system, a test working position, a temperature control system and a measurement and control protection system, wherein the heat sensitive electric parameter extraction system mainly comprises a static heat sensitive electric parameter extraction subsystem and a dynamic heat sensitive electric parameter extraction subsystem; a to-be-tested device is placed on the test working position; the to-be-tested device outputs analog waveform signals; the measurement and control protection system heats the to-be-tested device through the power cycling system; the measurement and control protection system cools the to-be-tested device through the temperature control system; and the measurement and control protection system measures and extracts heat sensitive electric parameters in the heat sensitive electric parameter extraction system.

Description

Technical field [0001] The invention relates to the field of research on the switching characteristics of power semiconductor devices, in particular to a device for extracting thermally sensitive electrical parameters of an IGBT. Background technique [0002] With the development of power electronics technology and the improvement of semiconductor manufacturing processes, power semiconductor devices are increasingly used. Especially in high-power, high-breaking frequency application scenarios such as flexible AC / DC transmission and electric locomotive traction, IGBTs stand out among many power devices due to their high withstand voltage, strong current capacity, and fast breaking speed. In the application of frequent breaking of high voltage and high current, chip overheating becomes one of the main factors of IGBT failure. At the same time, junction temperature and junction temperature fluctuations are one of the important parameters of the IGBT lifetime evaluation model. Ther...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2608G01R31/2619
Inventor 姚陈果李孟杰谭坚文董守龙李成祥
Owner CHONGQING UNIV
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