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Photo-etching alignment precision measurement accuracy evaluation method

A technology of overlay accuracy and lithographic overlay, which is applied in the fields of optics, pattern surface photolithography, semiconductor/solid-state device testing/measurement, etc. It can solve problems such as difficulty in obtaining evaluation and verification, and reduce evaluation costs. Satisfies the evaluation needs and has strong designability

Active Publication Date: 2018-05-29
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

This slicing method is somewhat destructive and it is difficult to obtain a large amount of data on the entire wafer to evaluate and verify the overlay accuracy measurement method

Method used

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  • Photo-etching alignment precision measurement accuracy evaluation method
  • Photo-etching alignment precision measurement accuracy evaluation method
  • Photo-etching alignment precision measurement accuracy evaluation method

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Experimental program
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Embodiment Construction

[0025] In order to solve the evaluation problem of lithographic overlay accuracy accuracy, the evaluation method of the present invention designs an overlay accuracy compensation value experiment, realizes it by exposure on an actual wafer, and then uses the overlay accuracy measurement method to be evaluated to measure, and The initial overlay accuracy compensation value is compared to determine whether the measurement method meets the measurement standard.

[0026] For the control flow of the evaluation method of the measurement accuracy of the lithography overlay precision, see figure 1 shown, including the following steps:

[0027] Step 1. Design the overlay accuracy measurement mark to be evaluated, and make it on the mask.

[0028] Step 2, forming a front-layer overlay pattern on the front-layer substrate through photolithography, etching and other processes;

[0029] Step 3. Perform on the wafer by giving the corresponding matrix series of overlay accuracy compensatio...

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Abstract

The invention discloses a photo-etching alignment precision measurement accuracy evaluation method. According to the method, a series of matrix design experiments are performed based on alignment precision compensation values of machines in a photo-etching exposure process, measurement results of an alignment precision measurement method to be evaluated and preset exposed alignment precision compensation values are compared, so that a correlation result is acquired, and the accuracy of the alignment precision measurement method is evaluated according to the fact whether the correlation resultis located in a standard interval or not. The accuracy of the photo-etching alignment precision measurement method can be accurately, simply and rapidly evaluated.

Description

technical field [0001] The invention relates to the field of large-scale integrated circuit photolithography technology, in particular to a method for evaluating the measurement accuracy of photolithography overlay precision. Background technique [0002] The development of semiconductor technology is often limited to the development of lithography technology, and the reduction of feature size puts forward stricter requirements on the precision of silicon wafer overlay. If the overlay accuracy between photolithography layers does not meet the requirements of the design criteria, it will lead to the failure of the front-end device function and the back-end connection function, which will directly cause the loss of product yield. The overlay accuracy requirements of the lithography process are proportional to the technology node of the semiconductor process, that is, higher technology nodes require more precise overlay accuracy. Therefore, the evaluation of overlay accuracy i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F9/00H01L21/66
CPCG03F9/7003H01L22/12H01L22/20
Inventor 许箭王艳云陈巧丽
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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