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Lead sulfide-coated perovskite quantum dots-based electroluminescent LED and preparation method

A quantum dot and perovskite technology, applied in the field of electroluminescent devices, can solve the problems of low external quantum efficiency, poor stability of perovskite quantum dots, and stability to be improved, so as to improve luminous efficiency and stability, The effect of improving stability

Inactive Publication Date: 2018-05-01
JILIN UNIV
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Problems solved by technology

However, perovskite quantum dot light-emitting diodes present two main problems: one is that there are surface defects in perovskite quantum dots, which leads to low external quantum efficiency of the prepared LED; The stability of the LED is poor, resulting in the stability of the prepared LED needs to be improved
After searching, PbS-coated perovskite quantum dots were used to improve its photoelectric performance and stability, and the new quantum dot material was used as the light-emitting layer to prepare perovskite quantum dot electroluminescent LEDs. There is no public report

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  • Lead sulfide-coated perovskite quantum dots-based electroluminescent LED and preparation method

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Embodiment approach

[0031] 1. Based on PbS coated CsPbI 3 The preparation scheme of the quantum dot electroluminescent LED is as follows, but the protection scope of the present invention is not limited to the following examples.

[0032] The first step, preparation of PbS coated CsPbI 3 Quantum dots, the steps are as follows:

[0033] First prepare cesium oleic acid solution: cesium carbonate Cs 2 CO 3 (0.814 g), oleic acid OA (2.5 mL), and octadecene ODE (30 mL) were put into a 100 mL three-neck flask, degassed and dried under vacuum at 120° C. for 1 hour. then in N 2 The mixture was heated to 150° C. until a clear solution was obtained.

[0034] Second, prepare PbS coated CsPbI 3 Quantum dots: Add 0.0028g thioacetamide to 1mL oleylamine OLA as the precursor of sulfur (S-OLA). Mix 10mL ODE and 0.168g PbI 2Add to a 50mL three-necked bottle, degas and dry under vacuum at 120°C for 1 hour. At this temperature, inject 1 mL of dried OA and 1 mL of S-OLA into the three-necked flask. After t...

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Abstract

The invention relates to a lead sulfide-coated perovskite quantum dots-based electroluminescent LED and a preparation method. The electroluminescent LED comprises ITO glass as a bottom electrode, n-type ZnO / polyethyleneimine as an electron transport layer (ETL) and a hole blocking layer (HBL), PbS-coated perovskite quantum dots as a light-emitting layer, a p-type 4,4',4''-tris(carbazol-9-yl) aniline film as a hole transport layer (HTL) and an electron blocking layer (EBL), and MoO3 / Au as a top electrode. The preparation method comprises the steps of firstly preparing a cesium oleic acid solution; preparing the PbS-coated CsPbI3 quantum dots, the electron transport layer, the hole blocking layer, the light-emitting layer, the hole transport layer and the electron blocking layer; and obtaining the PbS-coated perovskite quantum dots-based electroluminescent LED. By adopting the PbS-coated perovskite quantum dots, the photoelectric property of the perovskite quantum dots is improved, the stability of the quantum dots is ensured and good semiconductor performance of the quantum dots is kept at the same time, and the efficient and stable electroluminescent LED is prepared from the quantum dots as the light-emitting layer.

Description

technical field [0001] The invention relates to the preparation of a novel quantum dot light-emitting diode, in particular to an electroluminescent diode (Light-Emitting Diode, LED) based on lead sulfide (PbS)-coated perovskite quantum dots and a preparation method thereof, belonging to electroluminescence field of light emitting devices. Background technique [0002] In recent years, due to their unique optical properties, such as high color purity, high fluorescence quantum yield, adjustable color, and narrow emission peak, perovskite quantum dots have broad application prospects in the field of optoelectronic devices such as light-emitting diodes. . However, perovskite quantum dot light-emitting diodes present two main problems: one is that there are surface defects in perovskite quantum dots, which leads to low external quantum efficiency of the prepared LED; The stability of the LED is poor, resulting in the stability of the prepared LED needs to be improved. At pres...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K71/00
Inventor 张宇陈真张晓宇陆敏于伟泳张铁强
Owner JILIN UNIV
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