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Ohmic-contact and Schottky contact super-barrier rectifier and manufacturing method therefor

A super-barrier rectification and Schottky contact technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of large forward voltage drop, weak overcurrent capability of rectifiers, etc., and can withstand overcurrent Improved capability, increased ohmic contact design, reduced effect of forward voltage

Active Publication Date: 2018-04-20
CHONGQING ZHONGKE YUXIN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the conventional Schottky contact super barrier rectifier still works in the single conduction mode when the current density is high, so that the high current condition will cause a very large forward voltage drop, so the overcurrent of the conventional Schottky contact super barrier rectifier weak ability

Method used

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  • Ohmic-contact and Schottky contact super-barrier rectifier and manufacturing method therefor
  • Ohmic-contact and Schottky contact super-barrier rectifier and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Such as figure 1 As shown, a super barrier rectifier with ohmic contact and Schottky contact is characterized in that it includes a lower electrode layer 10, a heavily doped first conductivity type substrate layer 20, a lightly doped first conductivity type epitaxial layer 30, a second Two-conductivity type body region 31 , Schottky contact region 40 , gate dielectric layer 41 , gate electrode layer 42 , masking dielectric layer 43 , ohmic contact region 44 and upper electrode layer 50 .

[0046] The heavily doped substrate layer 20 of the first conductivity type covers the lower electrode layer 10 .

[0047] The lightly doped first conductive type epitaxial layer 30 covers the heavily doped first conductive type substrate layer 20 .

[0048] The body region 31 of the second conductivity type covers part of the surface of the epitaxial layer 30 of the lightly doped first conductivity type.

[0049] The ohmic contact region 44 covers part of the surface above the secon...

Embodiment 2

[0059] Such as figure 2 As shown, a super barrier rectifier with ohmic contact and Schottky contact is characterized in that it includes a lower electrode layer 10, a heavily doped first conductivity type substrate layer 20, a lightly doped first conductivity type epitaxial layer 30, a second Two conductivity type body region 31 , first conductivity type enhancement layer 32 , Schottky contact region 40 , gate dielectric layer 41 , gate electrode layer 42 , masking dielectric layer 43 , ohmic contact region 44 and upper electrode layer 50 .

[0060]The heavily doped first conductivity type substrate layer 20 covers the lower electrode layer 10;

[0061] The lightly doped first conductivity type epitaxial layer 30 covers the heavily doped first conductivity type substrate layer 20;

[0062] The second conductivity type body region 31 covers part of the surface above the lightly doped first conductivity type epitaxial layer 30;

[0063] The enhancement layer 32 of the first c...

Embodiment 3

[0074] A super barrier rectifier with ohmic contact and Schottky contact, characterized in that it includes a lower electrode layer 10, a heavily doped first conductivity type substrate layer 20, a lightly doped first conductivity type epitaxial layer 30, a second conductivity type Body region 31 , Schottky contact region 40 , gate dielectric layer 41 , gate electrode layer 42 , masking dielectric layer 43 , ohmic contact region 44 and upper electrode layer 50 .

[0075] A method for manufacturing an ohmic contact and a Schottky contact super barrier rectifier is characterized in that it comprises the following main steps:

[0076] Select the first conductivity type as N type, and the second conductivity type as P type;

[0077] 1) Covering the N-type epitaxial layer 30 on the N+ type substrate layer 20; the N+ type substrate layer 20 is an arsenic substrate with a doping concentration above the 19th power; the N-type epitaxial layer 30 is an arsenic substrate with an impurity...

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Abstract

The invention discloses an ohmic-contact and Schottky contact super-barrier rectifier and a manufacturing method therefor, and the method is characterized in that the rectifier comprises a lower electrode layer, a heavy doped substrate layer of a first conductive layer, a light doped epitaxial layer of the first conductive type, a body region of a second conductive type, a Schottky contact region,a gate medium layer, a gate electrode layer, a shielding medium layer, an ohmic contact region, and an upper electrode layer. The rectifier is simple in manufacturing technology, and optimizes the electrical features and overcurrent withstanding capability.

Description

technical field [0001] The invention relates to the technical field of power semiconductor power electronic devices, in particular to an ohmic contact and Schottky contact super barrier rectifier and a manufacturing method thereof. Background technique [0002] Power semiconductor rectifiers are widely used in power converters and power supplies. Conventional super-barrier rectifiers integrate parallel rectifier diodes and MOS transistors between the anode and cathode to form a rectifier device with low turn-on voltage drop, reasonable leakage level, and stable high-temperature performance. It has excellent performance in applications below 100V. Clear competitive advantage. [0003] Typical super barrier rectifiers in the prior art have various structures and corresponding manufacturing methods, but their device structures and manufacturing processes are relatively complicated. [0004] The Schottky contact super barrier rectifier proposed in the prior art has a simple ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/329
CPCH01L29/0603H01L29/0684H01L29/66143H01L29/872
Inventor 陈文锁黄彬张培健刘建王飞欧宏旗钟怡
Owner CHONGQING ZHONGKE YUXIN ELECTRONICS
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