ga 2 o 3 Fabrication method of thin film transistor

A thin film transistor, ga2o3 technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices and other directions, can solve the problems of low utilization rate of raw materials, high reaction temperature, environmental pollution, etc., to achieve easy control of the experimental process, good uniformity, The effect of easy response

Active Publication Date: 2020-01-31
XIDIAN UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to propose a Ga 2 o 3 The preparation method of thin-film transistors, to solve the problems of uneven growth of thin films, low utilization rate of raw materials, high reaction temperature, complicated process, difficult to control, and environmental pollution, to achieve uniform growth of large-area thin films

Method used

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  • ga <sub>2</sub> o <sub>3</sub> Fabrication method of thin film transistor
  • ga <sub>2</sub> o <sub>3</sub> Fabrication method of thin film transistor
  • ga <sub>2</sub> o <sub>3</sub> Fabrication method of thin film transistor

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Experimental program
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Effect test

Embodiment 1

[0045] Embodiment 1, making a layer of film Ga with a thickness of 8nm 2 o 3 thin film transistor.

[0046] Step 1, preparing an aqueous precursor solution.

[0047] Take Ga(NO 3 ) 3 Solid powder 0.26g, deionized water 10mL, Ga(NO 3 ) 3 The solid powder was dissolved in deionized water to make a concentration of 0.1mol / L Ga(NO 3 ) 3 Precursor aqueous solution.

[0048] Step 2, cleaning the silicon wafer.

[0049] Select a silicon wafer containing a 200nm thick silicon oxide insulating layer as the substrate, and clean it as follows:

[0050] Ultrasonic soaking in acetone solution for 10 minutes, then ultrasonic soaking in ethanol solution for 10 minutes, and finally ultrasonic soaking in deionized water for 10 minutes to complete the cleaning of the silicon wafer substrate.

[0051] Step 3, decontamination of the silicon oxide surface.

[0052] Use the oxygen plasma of the glue remover to decontaminate the surface of the cleaned silicon wafer, that is, place the cle...

Embodiment 2

[0059] Embodiment 2, making a layer of film Ga with a thickness of 5nm 2 o 3 thin film transistor.

[0060] Step 1, preparing an aqueous precursor solution.

[0061] Take Ga(NO 3 ) 3 Solid powder 0.768g, deionized water 10mL, Ga(NO 3 ) 3 The solid powder was dissolved in deionized water to make a concentration of 0.03mol / L Ga(NO 3 ) 3 Precursor aqueous solution.

[0062] Step two, cleaning the silicon wafer.

[0063] The specific implementation of this step is the same as step 2 of embodiment 1.

[0064] Step 3, decontamination of the silicon oxide surface.

[0065] The specific implementation of this step is the same as step 3 of embodiment 1.

[0066] Step 4, spin coating the aqueous solution of the precursor.

[0067] Drop the precursor aqueous solution on the silicon oxide layer of the decontaminated silicon wafer with a dropper, and spin coat it for 30 seconds at a speed of 4000rpm using a homogenizer to form a uniform layer of Ga(NO 3 ) 3 film.

[0068] St...

Embodiment 3

[0072] Embodiment 3, making a layer of film Ga with a thickness of 15nm 2 o 3 thin film transistor.

[0073] Step A, preparing an aqueous precursor solution.

[0074] Take Ga(NO 3 ) 3 Solid powder 1.28g, deionized water 10mL, Ga(NO 3 ) 3 The solid powder was dissolved in deionized water to make a concentration of 0.5mol / L Ga(NO 3 ) 3 Precursor aqueous solution.

[0075] Step B, cleaning the silicon wafer.

[0076] The specific implementation of this step is the same as step 2 of embodiment 1.

[0077] Step C, decontamination of the silicon oxide surface.

[0078] The specific implementation of this step is the same as step 3 of embodiment 1.

[0079] Step D, spin coating the aqueous solution of the precursor.

[0080] Drop the precursor aqueous solution on the silicon oxide layer of the decontaminated silicon wafer with a dropper, and spin coat it for 30 seconds at a speed of 2000rpm using a homogenizer to form a uniform layer of Ga(NO 3 ) 3 film.

[0081] Step ...

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Abstract

The invention discloses a preparation method of a Ga2O3 thin film transistor which is mainly used for solving the problems of uneven property of thin films grown via conventional technologies, low utilization rate of raw material, high reaction temperature and production processes being complex and difficult to control in conventional technologies. An implementation plan for the preparation methodcomprises the following steps: 1. a precursor Ga (NO3) 3 aqueous solution is prepared; 2. a silicon oxide wafer is cleaned and surface decontamination is performed; 3. the precursor Ga(NO3)3 aqueoussolution is spin-coated on the cleaned silicon oxide wafer; 4. a silicon wafer sample spin-coated with the precursor Ga(NO3)3 solution is annealed to form a Ga2O3 film.5. a metal electrode is made onthe annealed Ga2O3 film to complete manufacturing operation of a Ga2O3 thin film transistor. The preparation method disclosed in the invention is simple and easy to implement, only a low synthesis temperature is needed to obtain molecular level uniformity in a short time, and electrical tests show that the transistor made via the preparation method disclosed in the present invention is good in electrical properties and can be used in deep ultraviolet detectors.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a Ga 2 o 3 The preparation method of thin film transistor can be used in ultraviolet detector. Background technique [0002] Ga 2 o 3 It is a wide bandgap compound semiconductor material. Its forbidden band width is between 4.5 and 4.9eV, second only to diamond. In addition to excellent photoelectric properties, Ga 2 o 3 The material also has good thermal and chemical stability. It has five crystal structures of α, β, ε, δ and γ, among which the monoclinic β-Ga 2 o 3 Most commonly, all other isomers convert to the beta phase after high temperature heat treatment. β-Ga 2 o 3 The film is highly transparent in the deep ultraviolet region, and its transmittance can reach more than 80%, which has the natural advantage of preparing deep ultraviolet transparent conductive film. With the continuous development of modern semiconductor photodetection technology, u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L29/786
CPCH01L21/02381H01L21/02565H01L21/02628H01L29/66969H01L29/7869
Inventor 张春福许育张进成郝跃常晶晶于雪婷吴艺聪张力鑫
Owner XIDIAN UNIV
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