Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal mask for vapor deposition, method for producing metal mask for vapor deposition, and substrate for forming metal mask for vapor deposition

A metal mask and mask technology, applied in metal material coating process, vacuum evaporation plating, semiconductor/solid-state device manufacturing, etc., can solve the problem of inability to cope with the high density of mask holes

Active Publication Date: 2018-04-17
TOPPAN PRINTING CO LTD
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to reduce the ratio of the size of the large opening to the size of the small opening, and the wet etching method cannot cope with the high density of mask holes in actual manufacturing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal mask for vapor deposition, method for producing metal mask for vapor deposition, and substrate for forming metal mask for vapor deposition
  • Metal mask for vapor deposition, method for producing metal mask for vapor deposition, and substrate for forming metal mask for vapor deposition
  • Metal mask for vapor deposition, method for producing metal mask for vapor deposition, and substrate for forming metal mask for vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] [Preparation of resist layer composition]

[0082] In paragraph 0053, 70 parts by weight of pentaerythritol triacrylate, 123 parts by weight of Cardo resin (V259ME: manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.), and 14 parts by weight of a photopolymerization initiator (IRGACURE907: manufactured by BASF Japan Corporation) (IRGACURE is a registered trademark) was diluted with cyclohexanone so that the solid content of the resist layer composition became 50% by weight to prepare a resist layer composition.

[0083] [Manufacturing of metal masks for vapor deposition]

[0084] On the electrode surface 51S of the electrode member 51 , a negative resist layer composition was applied so that the film thickness after drying would be 30 μm. Thereafter, the resist layer composition was dried at 90° C. / 3 minutes using a hot plate, and a high-pressure mercury lamp (intensity of light: illuminance of 365 nm bright line was 40 mW / cm 2 ), exposed to 200mJ / cm through a p...

Embodiment 2

[0087] The mask member of Example 2 was obtained like Example 1 except having changed the developing time in Example 1 to 45 seconds. As a result of observing the cross-sectional shape of the resist pattern with a scanning electron microscope, it was confirmed that the width of the top surface 52B was 35.9 μm, the width of the bottom surface 52F was 62.7 μm, and the resist pattern was in the shape of an inverted truncated cone. In addition, when the cross-sectional shape of the mask member 32 was observed, the inclination angle θ was 73.6°, and [(3×tan θ)×A] / H was 0.16.

Embodiment 3

[0089] Change the exposure amount in Example 1 to 150mJ / cm 2 , and the mask member of Example 3 was obtained in the same manner as in Example 1 except that the development time was changed to 45 seconds. As a result of observing the cross-sectional shape of the resist pattern with a scanning electron microscope, it was confirmed that the width of the top surface 52B was 20.5 μm, the width of the bottom surface 52F was 61.8 μm, and the resist pattern was in the shape of an inverted truncated cone. In addition, when the cross-sectional shape of the mask member 32 was observed, the inclination angle θ was 67.9°, and [(3×tan θ)×A] / H was 0.29.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

This electroformed metal mask for vapor deposition comprises hole inner peripheral surfaces (321S) defining mask holes (321H) each of which has a frustum shape and has a large opening (322F) as the bottom portion thereof. In a cross-section perpendicular to the front surface: a slope angle (theta) between the rear surface and a virtual straight line Li connecting the large opening (322F) to a small opening (322B) is 50-85 DEG; and the distance between the front surface and the rear surface is represented by a thickness (H), the distance, on a reference plane (Pi) which is parallel to the rearsurface and which is disposed at a distance of (2 / 3)*H from the rear surface, between the hole inner peripheral surface (321S) and the virtual straight line is represented by a recessed amount A, and0<[(3*tan[theta])*A] / H<=0.3 is satisfied.

Description

technical field [0001] The present invention relates to a metal mask for vapor deposition, a method for producing the metal mask for vapor deposition, and a base material for forming the metal mask for vapor deposition. Background technique [0002] The metal mask for vapor deposition used in the vapor deposition method has mask holes as passages through which sublimated particles pass. The mask hole has a small opening facing the vapor deposition target and a large opening facing the vapor deposition source. As a method for forming the mask hole, for example, any one of laser irradiation method, wet etching method, and electroforming method is used (for example, refer to Patent Documents 1 to 3). [0003] In the laser irradiation method, laser light is irradiated to the surface of a metal plate which is a base material of a metal mask, and a part of the metal plate is continuously melted by heat applied by the laser light, thereby forming mask holes in the metal plate. At...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/04H01L51/50H05B33/10
CPCC23C14/04H05B33/10C22C38/08C23C14/042C25D1/10
Inventor 阿部裕一郎出町泰之武田宪太
Owner TOPPAN PRINTING CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com