Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Hybrid plasma generator for processing silicon-based material

A technology of plasma and silicon-based materials, applied in the direction of plasma, electrical components, etc., can solve the problems that the quality of the machined surface cannot reach the ideal target, the shape of the plasma jet is unstable, and the diameter of the beam spot cannot be obtained, so as to overcome the easy damage. Quartz glass tube, optimized ignition process, morphologically stable effect

Pending Publication Date: 2018-04-17
SICHUAN UNIV
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method can excite the working gas to generate active reactive particles, and rely on the chemical reaction between the active reactive particles and the silicon-based material to generate gas phase products, which can avoid surface deterioration and subsurface damage on the processed surface, but in the induction coil area, The Lorentz force will induce a strong swirling eddy current, resulting in unstable shape of the plasma jet at the jet port of the device during the processing, unable to obtain a constant beam spot diameter, and the quality of the processed surface cannot reach the ideal goal; and there are The skin effect of the current, the high temperature area deviates from the axis of the quartz glass tube, and the energy is not fully coupled into the plasma jet, resulting in low processing efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hybrid plasma generator for processing silicon-based material
  • Hybrid plasma generator for processing silicon-based material
  • Hybrid plasma generator for processing silicon-based material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to better explain the present invention, the specific implementation of the present invention will now be described in detail in conjunction with the accompanying drawings.

[0027]A hybrid plasma generator for etching processing of silicon-based materials disclosed by the invention is composed of a DC plasma generator (10) and a radio frequency inductively coupled plasma generator (20). Among them, the DC plasma generator is mainly composed of the cathode part, the arc starting casing, the first anode body, the anode casing, the second anode part, the first insulating sleeve, and the second insulating sleeve; the RF inductively coupled plasma generator is mainly composed of quartz glass Tube, composed of induction coils. The cathode part is assembled by the cathode head (118) and the cathode seat. The cooling water enters from the cooling water inlet (102), flows through the internal cooling water channel, and flows out from the cooling water outlet (113); the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A hybrid plasma generator for processing a silicon-based material comprises a DC plasma generator and a radio frequency induction coupling plasma generator. Compared with a conventional radio frequency coupling plasma generator for processing the silicon-based material, the hybrid plasma generator has the following remarkable advantages that 1, the processing efficiency is high, arc plasma jet issimulated secondarily under an effect of an induction coil magnetic field, more energy is obtained within unit time to simulate working gas, so that the number of reaction active particles in unit volume is increased; 2, the ignition process is optimized, ignition is completed through an electric spark generated by a negative electrode part and a positive electrode part, and the problem that a quartz glass tube is easy to damage during the ignition process of a traditional radio frequency induction coupling plasma generator is solved; and 3, the surface quality of the silicon-based material after being processed is improved, the plasma jet with constant beam spot diameter is maintained for a long time under the condition that a setting parameter is not changed, and the certainty processingof a material surface is achieved.

Description

technical field [0001] The invention discloses a hybrid plasma generator used for processing silicon-based materials, which belongs to the field of plasma processing equipment. Background technique [0002] In recent years, silicon-based ultra-precision parts have become more and more widely used in aerospace, astronomical observation and other fields, and the demand is increasing. Requirements such as degenerated layers and subsurface damage. In order to achieve the above goals, plasma excitation such as CF 4 A kind of trajectory surface processing method dominated by active reactive particles generated by working gas has received great attention from researchers at home and abroad. [0003] At present, the way to excite the working gas to generate active reactive particles mainly relies on radio frequency inductively coupled plasma generators. This method can excite the working gas to generate active reactive particles, and rely on the chemical reaction between the acti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/32H05H1/30
CPCH05H1/30H05H1/32
Inventor 余德平吴杰钟彦杰徐继业姚进
Owner SICHUAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products