ITO substrate and OLED (Organic Light-Emitting Diode) display
A display and substrate technology, applied in the direction of electric solid-state devices, semiconductor devices, organic semiconductor devices, etc., can solve the problems of limited application, low efficiency of red OLED products, wide light-emitting spectrum, etc., and achieve multiple performance improvements and significant competitive advantages , the effect of improving efficiency
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Embodiment 1
[0035] An ITO substrate includes a substrate, a photonic crystal, a first protection layer, a quantum dot layer, a second protection layer and an ITO layer deposited on the substrate in sequence.
[0036] The substrate is glass; photonic crystals in a rectangular array are formed on the substrate by an electron beam printing method. The material of the photonic crystal is Si 3 N 4 and GaN with a thickness of 450nm.
[0037] The first protection layer is formed on the photonic crystal by physical vapor deposition, and the material of the first protection layer fills the gap formed by the photonic crystal. The thickness of the first protective layer is 270nm, and the material of the first protective layer is Al 3 N 4 .
[0038] The second protective layer is formed on the quantum dot layer using physical vapor deposition, and the material of the second protective layer is Al 3 N 4 . The thickness of the second protective layer is preferably 40 nm.
[0039] The thickness o...
Embodiment 2
[0042] An ITO substrate includes a substrate, a photonic crystal, a first protection layer, a quantum dot layer, a second protection layer and an ITO layer deposited on the substrate in sequence.
[0043] The substrate is polyethylene terephthalate.
[0044] A rectangular array of photonic crystals is formed on the substrate by laser holography. The material of the photonic crystal is InP, and the thickness is 300nm.
[0045] The first protective layer is prepared and formed on the photonic crystal by chemical vapor deposition, and the material of the first protective layer fills the gap formed by the photonic crystal. The thickness of the first protective layer is 180nm, and the material of the first protective layer is Al 2 o 3 .
[0046] The second protective layer is prepared and formed on the quantum dot layer using a chemical vapor deposition method, and the material of the second protective layer is Al 2 o 3 . The thickness of the second protective layer is prefe...
Embodiment 3
[0050] An ITO substrate includes a substrate, a photonic crystal, a first protection layer, a quantum dot layer, a second protection layer and an ITO layer deposited on the substrate in sequence.
[0051] The substrate is polyvinyl alcohol.
[0052] A rectangular array of photonic crystals is formed on the substrate by laser holography. The photonic crystal is made of InGaN with a thickness of 600nm.
[0053] The first protective layer is prepared and formed on the photonic crystal by using a physical vapor deposition method, and the material of the first protective layer fills the gap formed by the photonic crystal. The thickness of the first protective layer is 350nm, and the material of the first protective layer is Si 3 o 4 .
[0054] The second protective layer is prepared and formed on the quantum dot layer using a physical vapor deposition method, and the material of the second protective layer is Si 3 o 4 . The thickness of the second protective layer is prefera...
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