Preparation method forlarge-grain and low-hardness sputtering titanium ring

A low-hardness, large-grain technology, used in sputtering, ion implantation, coating, etc., can solve the problems of high hardness and small titanium ring grains, and achieve low hardness, low deformation resistance, and reduced The effect of operational difficulty

Inactive Publication Date: 2018-04-13
GRIKIN ADVANCED MATERIALS
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  • Claims
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Problems solved by technology

Referring to the titanium ring manufacturing process disclosed in the Chinese patent applications with publication numbers CN1045...

Method used

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  • Preparation method forlarge-grain and low-hardness sputtering titanium ring
  • Preparation method forlarge-grain and low-hardness sputtering titanium ring
  • Preparation method forlarge-grain and low-hardness sputtering titanium ring

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Embodiment

[0029] Take 10kg of high-purity titanium ingot, hold it at 580°C for 1.5h for the first heat treatment, and then upset it into 170mm×70mm in multiple steps while it is hot, roll it unidirectionally along the length direction to a thickness of 7.5mm, cut off the irregular part of the edge, and Hold at 650°C for 3 hours for the second heat treatment and then level off as attached figure 1 As shown, the waterjet cutting into a 1242mm×80mm port is a positive "S"-shaped slat blank as attached figure 2 As shown, after removing the surface dirt, it is rolled into a ring, and the vacuum degree is 8.5×10 -3 Pa vacuum annealing furnace at 820 ℃ for 3 hours for the third heat treatment, cleaning the surface to obtain titanium ring as attached image 3 shown.

[0030] It should be noted that among the present invention, each flattened slab (as attached figure 1 ) can be cut by waterjet into two slab blanks with positive S-shaped ports (as attached figure 2 ).

[0031] By changing t...

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Abstract

The invention discloses a preparation method for a large-grain and low-hardness sputtering titanium ring, and belongs to the technical field of manufacturing of magnetron sputtering targets. The method comprises the steps of providing a high-purity titanium ingot, carrying out first heat treatment, carrying out hot heading, carrying out cold rolling, carrying out second heat treatment, carrying out cutting, carrying out edge rolling and carrying out third heat treatment. The method has the advantages that the titanium ingot is subjected to heat treatment and deformation so as to obtain the large-grain and low-hardness sputtering titanium ring; a port of the sputtering titanium ring is in an upright S shape, the grain size of the large crystal grain is larger than 200 microns, the hardnessvalue of the low hardness is lower than the Vickers hardness 70; and compared with a traditional sputtering titanium ring, the large-grain and low-hardness sputtering titanium ring has the advantagesthat the size of the prepared titanium ring is large, the deformation resistance of the sputtering ring is small, the titanium ring is convenient to mount and dismount, damage to the surface of the sputtering ring in the mounting and dismounting processes can be reduced, and therefore the product quality can be improved, and the operation difficulty can be reduced.

Description

technical field [0001] The invention belongs to the technical field of manufacturing magnetron sputtering targets, and relates to a method for preparing a large-grain and low-hardness sputtering titanium ring. Background technique [0002] With the advent of the information age, microelectronics and semiconductor technology play a pivotal role in the development of the national economy, and magnetron sputtering technology greatly promotes the development of microelectronics and semiconductor industries. The principle of magnetron sputtering is to use high-energy particles to bombard the target surface of a high-purity target, so that the target atoms gain energy to overcome the surface work function and escape from the surface to deposit on the substrate to form a thin film layer. However, high-energy particles bombard the target from all directions, so that the direction of the escaped target atoms is not unique. When the target atoms from different directions arrive at th...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22F1/18
CPCC22F1/183C23C14/3407
Inventor 胡伟丁照崇曾浩庞欣贺昕陈畅李勇军罗俊锋陈淼琴
Owner GRIKIN ADVANCED MATERIALS
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