Vertical structure LED chip based on photonic crystal and preparation method of vertical structure LED chip

A technology of LED chips and photonic crystals, applied in nano optics, semiconductor devices, electrical components, etc., can solve the problems of reducing light extraction efficiency, large resistance, etc., achieve excellent photoelectric performance, low production cost, and improve internal thermal field and current distribution The effect of uniformity

Active Publication Date: 2018-02-23
江门市奥伦德光电有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ITO also has a large resistance, and it will reduce the light extraction efficiency to a certain extent

Method used

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  • Vertical structure LED chip based on photonic crystal and preparation method of vertical structure LED chip
  • Vertical structure LED chip based on photonic crystal and preparation method of vertical structure LED chip
  • Vertical structure LED chip based on photonic crystal and preparation method of vertical structure LED chip

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preparation example Construction

[0041] A method for preparing a photonic crystal-based vertical structure LED chip, comprising the following steps:

[0042] A. Put the Si or Cu substrate layer 11 into deionized water and ultrasonically clean it at room temperature for 3-5 minutes to remove the dirt particles on the surface of the Si or Cu substrate layer 11, and then wash with hydrochloric acid, acetone, and ethanol in sequence to remove the surface organic matter. Dry high-purity N 2 Blow dry, pay attention not to use high-purity N 2 plasma;

[0043] B. Put the cleaned and dried Si or Cu substrate layer 11 into a vacuum chamber, and anneal at a high temperature of 700-1200°C for 30-120 minutes to remove the residual carbides on the surface of the Si or Cu substrate layer 11, so as to obtain a clean and flat surface ;

[0044] C. Preparation of Al single crystal metal thin film layer 12: heating Si or Cu substrate layer 11 to 700-1000°C, and filling with 0.5-2 sccm of high-purity N under high vacuum condi...

Embodiment 1

[0058] A method for preparing a photonic crystal-based vertical structure LED chip, comprising the following steps:

[0059] A. Put the Si or Cu substrate layer 11 into deionized water and ultrasonically clean it at room temperature for 3-5 minutes to remove the dirt particles on the surface of the Si or Cu substrate layer 11, and then wash with hydrochloric acid, acetone, and ethanol in sequence to remove the surface organic matter. Dry high-purity N 2 blow dry;

[0060] B. Put the cleaned and dried Si or Cu substrate layer 11 into a vacuum chamber, and anneal at a high temperature of 700-1200°C for 30-120 minutes to remove the residual carbides on the surface of the Si or Cu substrate layer 11, so as to obtain a clean and flat surface ;

[0061] C. Preparation of Al single crystal metal thin film layer 12: heating Si or Cu substrate layer 11 to 850°C, and filling with 1 sccm of high-purity N under high vacuum conditions 2 , heating the Al source to 1100°C to volatilize th...

Embodiment 2

[0072] A method for preparing a photonic crystal-based vertical structure LED chip, comprising the following steps:

[0073] A. Put the Si or Cu substrate layer 11 into deionized water and ultrasonically clean it at room temperature for 3-5 minutes to remove the dirt particles on the surface of the Si or Cu substrate layer 11, and then wash with hydrochloric acid, acetone, and ethanol in sequence to remove the surface organic matter. Dry high-purity N 2 blow dry;

[0074] B. Put the cleaned and dried Si or Cu substrate layer 11 into a vacuum chamber, and anneal at a high temperature of 1200° C. for 60 minutes to remove residual carbides on the surface of the Si or Cu substrate layer 11, thereby obtaining a clean and flat surface;

[0075] C. Preparation of Al single crystal metal thin film layer 12: heating Si or Cu substrate layer 11 to 850°C, and filling with 1 sccm of high-purity N under high vacuum conditions 2 , heating the Al source to 1100°C to volatilize the aluminum...

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Abstract

The invention discloses a vertical structure LED chip based on the photonic crystal and a preparation method of the vertical structure LED chip. The chip comprises a Si or Cu substrate layer, an Al monocrystalline metal thin film layer, a p-GaN thin film layer, an i-AlN thin film layer, an n-ZnO layer thin film and a monocrystalline photonic crystal thin film layer. The Si or Cu substrate layer, the Al monocrystalline metal thin film layer, the p-GaN thin film layer, the i-AlN thin film layer, the n-ZnO layer thin film and the monocrystalline photonic crystal thin film layer are down-up successively arranged. By adopting a p-type GaN/n-type ZnO heterostructure, the chip is advantaged by high thermal stability, high chemical stability and mature technology. By using the photonic crystal toreplace the LED chip with the IOT development vertical structure, the structure and making procedures of the chip are simplified, improving of light emitting efficiency of an LED device is facilitated, distribution uniformity of current in the device is improved, the photoelectric performance is excellent and preparation of low-cost and big-power photoelectric devices is facilitated.

Description

technical field [0001] The invention relates to an LED chip and a preparation method thereof, in particular to a photonic crystal-based vertical structure LED chip and a preparation method thereof. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lighting, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/26H01L33/40B82Y20/00
CPCH01L33/0012H01L33/005H01L33/26H01L33/40B82Y20/00Y02P70/50
Inventor 杨为家吴质朴何畏陈强
Owner 江门市奥伦德光电有限公司
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