Flexible ultraviolet (UV) detector of photodetector structure

Abstract

The invention relates to and provides an ultraviolet (UV) detector of an inorganic perovskite phototransistor structure. A substrate (1) is a glass substrate, a CsPbX3 thin film (2) is prepared on thesubstrate (1) as an active layer, a PMMA organic layer (4) doped with CsPbX3 quantum dots (5) is prepared by the same material on the surface of the CsPbX3 thin film (2) as a gate insulating layer, and the CsPbX3 quantum dots are taken as a UV light sensing window; a source electrode (3.1) and a drain Au electrode (3.2) of the thin film transistor are respectively located on two sides of the CsPbX3 thin film (2), an FTO gate electrode (6) is located in the middle on the CsPbX3 thin film (2), and the integrated function of photo-generated carrier separation, converted electrical signal readingand amplification is obtained under the modulation of the source electrode (3.1), the drain Au electrode (3.2) and the FTO gate (6) of the thin film transistor, so as to achieve high response UV signal detection. The phototransistor detector can adopt a top-gate structure as shown in FIG.1 or a bottom-gate structure as shown in FIG.2. The above two structures can be prepared on the glass substrate and also be prepared on a flexible substrate to form the flexible phototransistor UV detector of the bottom-gate or top-gate structure.

Description

technical field [0001] The invention relates to a novel ultraviolet detector technology with a phototransistor structure, which belongs to the field of photoelectric detection technology. Background technique [0002] Ultraviolet photodetectors and related technologies are widely used in military and civilian applications, such as missile early warning and tracking, ultraviolet light communication, engine work monitoring, deep space exploration research, ultraviolet astronomy, environmental monitoring, fire detection and alarm, and medicine. detection and so on. Therefore, ultraviolet detection technology has always been an international research hotspot and one of the main technical fields of competition in various countries. [0003] With the development of information technology, while improving performance, there is an urgent need for ultraviolet detection devices to develop in the direction of miniaturization, arrayization and flexibility. For UV detectors based on se...

AI Technical Summary

Problems solved by technology

For UV detectors based on semiconductors, they usually need to be prepared by means of molecular beam epitaxy on single crystal materials, and the detector target surface technology is not compatible with the single crystal silicon readout integrated circuit (ROIC) process, so they can only Prepared separately, it is difficult to realize the miniaturization and array of devices

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