Semiconductor material wet surface process passivation method

Abstract

The present invention relates to a semiconductor material wet surface process passivation method, belonging to the field of semiconductor material technology. Known technologies in the field are difficult to employ a wet process passivation means to maintain long-term stability of a passivation effect while effectively reducing a material surface state. A CH3[CH2]19SH is employed as a sulfide passivation solution and reacts with semiconductor materials in a special condition so that oxygen contamination at the surfaces of the semiconductor materials can be effectively removed, and a molecularlayer of a mercaptan with a long carbon chain is subjected to self-assembly at the surfaces of the semiconductor materials to realize stable passivation protection of the surfaces. The method providedby the invention is little in chemical pollution, simple to operate, low in cost and obvious in passivation effect, and can be used for surface process in a semiconductor device preparation process.

Description

technical field [0001] The invention designs a wet passivation method for the surface of a semiconductor material, in particular relates to a novel method for realizing stable passivation of the surface of a semiconductor material through an n-eicosanethiol solution, and belongs to the technical field of semiconductor materials. Background technique [0002] III-V semiconductor materials have the characteristics of large band gap, high electron mobility, direct band gap, high temperature resistance, etc., and become the most potential semiconductor material system after Si. They are used in semiconductor lasers, solar cells, MOS field effect transistors, Applications such as photodetectors have attracted attention. But due to lack of like Si / SiO 2 The stable passivation layer in the system and the high surface defect density of III-V semiconductor materials cause Fermi level pinning and high surface recombination rates, which directly affect the quality of the epitaxial lay...

AI Technical Summary

Problems solved by technology

At present, the reported sulfide passivation solutions mainly include NaS 9 h 2 O, (NH 4 ) 2 S, S 2 Cl, CH 3 CSNH 2 etc., but (NH 4 ) 2 S, S 2 Volatile H when passivated by Cl 2 S poisonous gas, NaS passivation has the problem of sodium ion pollution, and these sulfide passivations also have a prominent common disadvantage, that is, the sulfur passivation layer formed after passivation treatment is very thin, only 1-2 atomic layers thick, Therefore, the oxygen atoms in the air can still penetrate the passivation layer and erode the semiconductor surface below, resulting in a decrease in the passivation effect, which is not conducive to the subsequent application of III-V semiconductor materials.

Images