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A large-scale graphene film with ultra-high conductivity and a radio frequency microwave device

A technology of graphene film and microwave devices, applied in the field of materials, can solve the problems of limited materials, insufficient conductivity, low conductivity, etc., and achieve the effect of large size, low contact resistance and low plane impedance

Active Publication Date: 2020-01-14
武汉汉烯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the electrical conductivity of the film prepared by the new carbon material currently used is relative to the electrical conductivity of the metal material (10 7 S / m) is still far from enough, and the surface resistance is large. For example, Gaoquan Shi et al. reported in 2017 that graphene film was prepared by using graphene oxide, and the conductivity can reach 1.1×10 5 S / m [DOI: 10.1002 / adma.201702831]
The size of the precursor graphene oxide used is mostly between 10-20 μm, so its electrical conductivity is not high, which greatly limits its use as a material for passive devices such as antennas

Method used

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  • A large-scale graphene film with ultra-high conductivity and a radio frequency microwave device
  • A large-scale graphene film with ultra-high conductivity and a radio frequency microwave device
  • A large-scale graphene film with ultra-high conductivity and a radio frequency microwave device

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 1) Preparation of flexible graphene film: Print graphene oxide film with a size of 20 μm, the printing thickness is 30 μm, and then undergo hot pressing at 100 ° C to obtain a graphene oxide film;

[0028] 2) Take the graphene oxide film prepared in step 1), put it in a graphite high-temperature furnace, undergo carbonization at 200-600°C and graphitization at a high temperature at 2000-3000°C, and finally further hot-press forming, the temperature of hot-pressing is 50 -200°C, made flexible graphene film;

[0029] 3) get the flexible graphene membrane sample that makes in step 2), test characteristics such as its electrical conductivity, resistivity and magnetic permeability, after measuring, the electrical conductivity of graphene membrane is 1 * 10 6 S / m;

[0030] 4) according to step step 3) the characteristics such as electrical conductivity, magnetic permeability of graphene film are measured, use electromagnetic simulation software design center frequency to be ...

Embodiment 2

[0034] 1) Preparation of flexible graphene film: Graphene oxide film with a size of 60 μm is printed into a film with a printing thickness of 30 μm, and then hot-pressed at 100°C to obtain a graphene oxide film, and a graphene oxide sample is taken to observe its thickness with a transmission electron microscope. dimensions, the results are attached figure 2 As shown, the size of graphene oxide is 60-70 μm from the figure;

[0035] 2) Take the graphene oxide film prepared in step 1), put it in a graphite high-temperature furnace, undergo carbonization at 200-600°C and graphitization at a high temperature at 2000-3000°C, and finally further hot-press forming, the temperature of hot-pressing is 50 -200°C, made flexible graphene film;

[0036] 3) get the flexible graphene membrane sample that makes in step 2), test characteristics such as its electrical conductivity, resistivity and magnetic permeability, after measuring, the electrical conductivity of graphene membrane is 3.3 ...

Embodiment 3

[0041] 1) Preparation of flexible graphene film: Print a large-scale graphene oxide film with a size of 100 μm, the printing thickness is 30 μm, and then undergo hot pressing at 100 ° C to obtain a large-scale graphene oxide film;

[0042]2) Take the graphene oxide film prepared in step 1), put it in a graphite high-temperature furnace, undergo carbonization at 200-600°C and graphitization at a high temperature at 2000-3000°C, and finally further hot-press forming, the temperature of hot-pressing is 50 -200℃, a large size flexible graphene film was prepared, as attached figure 1 shown;

[0043] 3) Get the flexible graphene membrane sample that makes in step 2), test characteristics such as its electrical conductivity, electrical resistivity and magnetic permeability, large-scale graphene and copper electrical conductivity contrast figure as attached image 3 As shown, it can be seen from the figure that the conductivity of large-scale graphene is 5 × 10 6 S / m, similar to the...

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Abstract

The invention discloses a super-high-conductivity large-size graphene film and a radio-frequency microwave device. The method for preparing the super-high-conductivity large-size graphene film comprises the following steps: a large-size graphene oxide piece of over 20 microns is printed into a film, wherein the thickness is controlled to be at 5 to 100 microns; hot press molding is carried out ata temperature of 50 to 200 DEG C; and the obtained graphene oxide film is placed in a graphite high-temperature furnace, hot processing is carried out at a temperature of 200 to 600 DEG C and at a temperature of 2000 to 3000 DEG C, and then hot pressing molding at a temperature of 50 to 200 DEG C to obtain a super-high-conductivity large-size graphene film. Besides, the radio-frequency microwave device is prepared by using the large-size graphene film. Compared with the traditional carbon-based material, the prepared graphene film has the high in-plane orientation structure; the precursor hasa larger size, so that the internal contact points are reduced and the contact resistance is reduced; and the conductivity is improved and the low-plane impedance is realized; and the conductivity reaches up to 5*10<6>S / m. Meanwhile, the radio-frequency microwave device has advantages of low consumption, good bending performance, low cost, simple production process, and good environment protectioneffect.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a large-scale graphene film with ultra-high conductivity and a radio-frequency microwave device. Background technique [0002] RF microwave devices are an important part of radio equipment. Engineering systems such as radio communication, broadcasting, television, radar, navigation, electronic countermeasures, remote sensing, and radio astronomy, which use electromagnetic waves to transmit messages, rely on radio frequency microwave devices and their systems to work. Therefore, the development of radio frequency microwave devices is of great significance. At present, the preparation materials of most radio-frequency microwave devices are composed of metal aluminum, copper, gold, etc. The materials themselves are expensive and the production process is complicated, which greatly increases the production cost, and the metal antenna has advantages in terms of corrosio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/04H01B5/00H01B13/00H01Q1/36G01R29/10
CPCG01R29/10H01B1/04H01B5/00H01B13/0016H01B13/0026H01Q1/368
Inventor 何大平吴志鹏宋荣国
Owner 武汉汉烯科技有限公司
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