Diamond film-based full-sea depth temperature sensor and preparation method thereof

Abstract

A diamond film-based full-sea depth temperature sensor disclosed by the present invention comprises a tubular metal shell, a diamond substrate is arranged at the top end of the metal shell, and a temperature response element made of a boron doped diamond film material is arranged in the metal shell and on the diamond substrate. Electrode lead wires are arranged at the two ends of the temperature response element, the temperature response element and the electrode lead wires are covered with the ceramic or diamond-like carbon insulating layers, and a seal ring is arranged at the connection position of the metal shell and the diamond substrate. Meanwhile, the present invention also discloses a preparation method of the temperature sensor. The temperature sensor disclosed by the present invention is small in size, fast in response speed, high in resolution and stable in structure, and the measurement is not influenced by the external seawater pressure.

Description

technical field [0001] The invention relates to a temperature sensor, in particular to a method for preparing a diamond film-based full-sea depth temperature sensor. Background technique [0002] Temperature is one of the most basic hydrodynamic parameters of the ocean. It is also a necessary parameter to obtain ocean physical parameters such as salinity, and an important factor affecting ocean water exchange and water vapor exchange. High-precision and rapid measurement of seawater temperature is an important means to explore ocean internal waves and study high-temperature hydrothermal activity areas such as deep-sea black chimneys. [0003] At this stage, especially for temperature sensors with a working water depth of more than 4000m, the general-purpose ocean temperature sensor uses platinum resistance as the temperature response element, uses ceramic materials such as alumina and aluminum nitride as the substrate, and the temperature response element is exposed or insul...

AI Technical Summary

Problems solved by technology

Patent application number: CN200420055437.7 relates to an insulating partition, which fixes and prevents the deformation of the temperature response element, but this method reduces the response speed of the sensor

Patent application number: CN201020107919.8 relates to a high-voltage fast-response temperature sensor. It proposes to fill the micro-thermistor with a heat-conducting medium inside the temperature-measuring probe to improve the response speed of temperature measurement. However, the increase of the medium usually leads to a decrease in the specific heat capacity of the system. Increased, decreased sensitivity and response speed to temperature changes

Invention application number: CN201510236552.7 relates to a high-sensitivity film-type resistance temperature sensor and its manufacturing method, and proposes to use a thin-walled structure to improve the response speed of the temperature sensor. , the sensing structure needs to be further strengthened

Images