Excitation circuit with effects of increasing driving voltages of power field-effect transistor

Abstract

The invention discloses an excitation circuit with effects of increasing driving voltages of a power field-effect transistor. The excitation circuit comprises a BMS (battery management system) voltageoutput end, a single chip microcomputer, an energy storage capacitor C1, a power input end, overvoltage protective resistors R1, R2, R3 and R4, a voltage stabilization chip U1 and the power field-effect transistor Q1. The BMS voltage output end is connected with a PWM (pulse width modulation) output end of the single chip microcomputer by the energy storage capacitor C1; the power field-effect transistor Q1 is connected with a voltage output end of the voltage stabilization chip U1 by the overvoltage protective resistor R4; the BMS voltage output end is connected with a power input end of thevoltage stabilization chip U1 by the overvoltage protective resistor R1; power can be supplied to the voltage stabilization chip U1 by the power input end VCC via the overvoltage protective resistorsR2 and R3. The excitation circuit has the advantages that the problem of incapability of driving existing power field-effect transistors due to conditions of stepping down of voltages can be solved by the aid of the excitation circuit; the excitation circuit is simple in structure, convenient to adjust, high in precision, little in ripple and easy to control, and stable voltages can be outputted.

Description

technical field [0001] The invention relates to the technical field of field effect tubes, in particular to an excitation circuit for increasing the driving voltage of a power field effect tube. Background technique [0002] The application fields of power FETs are becoming more and more extensive. The driving circuit composed of them is an important factor affecting the stability and reliability of the entire electronic circuit system. The G-pole driving requirements of different specifications of power FETs are also different. Among the G pole drive requirements of power FETs, there is a technical characteristic parameter V gs (th), usually the threshold voltage V of the low-voltage FET gs (th) within 4V, high voltage FET It is usually between 3-5V, and the driving circuit must meet Requirements, the circuit can work reliably and stably. [0003] However, in the existing use environment of field effect tubes, the VCC power supply voltage of MCU is usually within 5V, ...

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Many motor drivers integrate charge pumps, but this will lead to increased design costs, which is not conducive to product sales

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