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Ultra-wideband monolithic microwave integrated low noise amplifier

A low-noise amplifier and microwave integration technology, which is applied to amplifiers, amplifiers with semiconductor devices/discharge tubes, improved amplifiers to reduce noise effects, etc., can solve the problems of reducing chip integration and achieve small footprint and good gain Effects of flatness, functional integration

Inactive Publication Date: 2018-01-16
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method broadens the bandwidth of the LNA, but its high-frequency performance needs to be further optimized, and its input and output matching are performed off-chip, which reduces the integration of the chip

Method used

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  • Ultra-wideband monolithic microwave integrated low noise amplifier
  • Ultra-wideband monolithic microwave integrated low noise amplifier
  • Ultra-wideband monolithic microwave integrated low noise amplifier

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Embodiment Construction

[0019] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0020] The invention provides an ultra-broadband monolithic microwave integrated low-noise amplifier, which is composed of a primary amplifying unit 1 and a secondary amplifying unit 2. First stage amplification unit 1 through C in AC couples the RF input signal into the NM 1 gate terminal, R F1 Connect NM 1 Gate End with Backvia 1 , R F2 bridged at NM 1 between the gate and drain terminals, NM 1 Source side with Backvia Backvia 2 Connected...

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Abstract

The invention discloses an ultra-wideband monolithic microwave integrated low noise amplifier, which realizes an ultra wideband and ultralow noise. The ultra-wideband monolithic microwave integrated low noise amplifier comprises a primary amplification unit (1) and a secondary amplification unit (2). The ultra-wideband monolithic microwave integrated low noise amplifier is a full-on-chip monolithic microwave integrated circuit, and an enhanced field-effect transistor is taken as an amplifying tube. A multilevel feedback structure is adopted on a circuit structure. A feedback resistor not onlyserves as an alternating-current negative feedback, thereby realizing input and output matching, and constructing a noise cancellation structure; and the feedback resistor also serves as a direct-current divider resistor, thereby providing a direct-current bias and a drain end power supply for the amplifying tube. Moreover, back hole grounding is adopted for the amplifier, thereby greatly reducingthe grounding inductance effect. A design without an on-chip inductor is used, so that the chip area is saved. The ultra-wideband monolithic microwave integrated low noise amplifier is simple in structure and easy to integrate, and occupies a small chip area.

Description

technical field [0001] The invention belongs to the technical field of microwave integrated circuits, in particular to an ultra-wideband monolithic microwave integrated low-noise amplifier, which has the characteristics of ultra-wideband and ultra-low noise. Background technique [0002] In recent decades, modern wireless communication technology has developed rapidly towards high speed, high capacity, ultra-wideband and high integration. As the first key module of the wireless receiver, the low noise amplifier plays a decisive role in the overall gain, bandwidth and noise performance of the wireless receiver. In order to realize ultra-wideband, ultra-low-noise low-noise amplifiers, research in various fields is deepening, and circuit design, process manufacturing, and model modeling are developing rapidly. Because monolithic microwave integrated circuits have unique advantages in terms of functional integration and device performance, monolithic microwave integrated circui...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F1/34H03F3/193
Inventor 闫旭段宗明林福江
Owner UNIV OF SCI & TECH OF CHINA
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